Intra-chip power and test signal generation for use with test structures on wafers

ABSTRACT

The fabrication of the wafer may be analyzed starting from when the wafer is in a partially fabricated state. The value of a specified performance parameter may be determined at a plurality of locations on an active area of a die of the wafer. The specified performance parameter is known to be indicative of a particular fabrication process in the fabrication. Evaluation information may then be obtained based on a variance of the value of the performance parameter at the plurality of locations. This may be done without affecting a usability of a chip that is created from the die. The evaluation information may be used to evaluate how one or more processes that include the particular fabrication process that was indicated by the performance parameter value was performed.

RELATED APPLICATIONS

This application claims priority to provisional U.S. Patent ApplicationNo. 60/497,945 entitled “Apparatus and Method for Fabrication ProcessCharacterization,” filed Aug. 25, 2003; and to provisional U.S. PatentApplication No. 60/563,168 entitled “System and Method for Evaluating AFabrication of a Semiconductor Component and Wafer,” filed Apr. 15,2004. Both of the aforementioned priority applications are herebyincorporated by reference in their entirety for all purposes.

TECHNICAL FIELD

The present invention generally relates to fabrication of semiconductorcomponents, and more specifically to ways in which the fabrication ofsuch devices can be evaluated.

BACKGROUND

Semiconductor components, such as microprocessors are formed fromhigh-density integrated circuits (ICs). Typically, these components aremanufactured by processing a semiconductor wafer (e.g. Silicon, orGallium Arsenide). The wafer may be fabricated so that transistors, theswitch elements, and other elements (e.g. resistors, capacitance, wiringlayers etc.) are printed and formed in predetermined patterns,configurations, and locations. Once the wafer has been fully processedand passivated (to protect from the environment), it is diced intoseparate die, packaged onto carriers and subjected through final testand characterization.

Semiconductor device fabrication is a multi-step and complex process.Numerous steps may be performed. A fabrication process for a wafer (andthus an individual semiconductor component) comprises performing suchsteps in a designated order, and in a particular manner, so that adesired pattern, formation, and configuration of transistors, devices,and other integrated circuit elements are formed for individualsemiconductor components (e.g. “chips”) that comprise the wafer. Eachprocess step requires the use of ultra-sensitive machinery andtechniques. Accordingly, it is often desirable to continuously monitorthe quality of the fabrication process. If problems, such as defectsand/or process excursions are encountered in the fabrication anddetected quickly, the fabricator can take remedial action.

In general, there are two classes of techniques, before and after thewafer is fully exposed, to detect problems caused by the design and/orfabrication. One class takes place after completion of the semiconductordevice fabrication sequence, where full-wafer (or chip) functional testand/or on the critical circuits of the device (at wafer-level orpackaged chip) are performance-tested under pre-determined operatingconditions. The other takes place during the fabrication processsequence, where some techniques rely on measuring certain parameters onthe wafer. These parameters are indicative of, or otherwise capable ofbeing extrapolated to be indicative of, possible problems orunanticipated outcomes from the fabrication process. These parametersmay be determined by means of optical and electron beam techniques,including, for example, spectroscopic ellipsometry, reflectometry, andcritical dimension scanning electron microscopy (CD-SEM). In oneapproach, measurements are made to verify certain physical parameterssuch as gate width, gate-oxide thickness, interconnect width, anddielectric height. Under such an approach, the measurements are normallymade on test structures in the wafer scribe area, adjacent to the activeportion of the chips.

Other techniques currently in use rely on measuring physicalimperfections on the semiconductor wafer that result from thefabrication process. Examples of such techniques include blocked etch,via residues, gate stringers, chemical mechanical polishing erosion, andother process imperfections. These measurements may be made throughoptical inspection or review, electron beam inspection, and optical orelectron beam review. By making such measurements, defects andimperfections formed during the fabrication of the wafer can beinspected, isolated, categorized, or otherwise reviewed and analyzed.These measurements typically cover the entire wafer and exclude thescribe area adjacent to the chip active area.

Still further, other approaches currently in use subject the wafer toelectrical testing of specialized test structures that are positioned inthe scribe portion of the wafer, or on parts and portions of the waferthat will not be used for the final product or test die in the waferwhich again will not be used or fully processed for the final product.The testing is usually accomplished through the use of mechanicalcontacts for in-line (during fabrication) test probing.

Existing approaches have many shortcomings. Among these shortcomings,the techniques may require destruction of the semiconductor component,or have little value in indicating at what point the fabrication processfailed or had an unexpected outcome. Additionally, the conventionalinspection and review techniques have a high incidence of false counts,resulting from the presence of real defects that leave no electricalsignature, and nuisance counts, which are caused by poor signal to noiseratio for very small defects. Also, these techniques cannot accuratelypredict the real-life and final electrical characteristics of themeasured device or chip. Moreover, the existing electrical inspectiontechniques are very time-consuming and, therefore, cost prohibitive andthey cannot be used to study large areas of the wafer in a routinemanner.

Furthermore, the use of test structures in the scribe area provideslittle information on components in the active area chip areas of thewafer. For example, the scribe area is known to deviate from themicro-loading issues resulting from pattern density variation in theactive area of the wafer, and as such, is not well suited forforecasting in-chip variations resulting from local process variation.Furthermore, the scribe area of the wafer is discarded during the chipsawing process and is not suitable, therefore, for measurements postfabrication.

There are numerous electrical in-line test methods to monitor thequality and integrity of the integrated circuit fabrication process.Such methods are based on predicting the performance of the completedintegrated circuits, using the measurements obtained from partiallyprocessed wafers. For example, the thickness of the oxide film on thewafer can be determined through ellipsometric measurements. In addition,the aforementioned parametric measurements can be used to determinespecific critical device parameters that are directly tied into thefabrication process. For example, one could use the threshold voltage todetermine the doping levels of the diffusions. These parametricmeasurements are performed at various stages on the partially processedwafer. In a typical approach, the parametric measurements are performedspecifically to measure physical and electrical parameters related tothe process, and are performed on structures located in the wafer scribearea. Examples of parametric measurements include the measurements oftransistor threshold voltage and off-current leakage. During thesemeasurements, electrical and process tests constant (DC) voltage orsmall-signal (AC) voltage is applied to predetermined locations on thewafer to activate the device structures at several discrete locationsacross the wafer in the scribe area. In one specific technique, theintegrity of the process is verified by comparing the values of themeasured DC circuit parameters with a set of expected values.

In addition to some of the shortcomings described above, the electricalin-line test methods results are poorly suited for characterizingprocess parameters. For example, any specific observed deviation in oneparameter of an integrated circuit may be caused by deviations in anumber of process parameters. In addition, the conventional DCmeasurements are poor indicators of at-speed circuit performance. Mostimportantly, these parametric measurements are confined to the scribearea of the wafer, which as detailed above, is problematic.

Electrical test techniques that rely on large-area test structures areroutinely used to understand full die effects that cannot be ascertainedfrom wafer scribe test structures. In these applications, all (U.S. Pat.No. 6,281,696 and U.S. Pat. No. 6,507,942), or most (U.S. Pat. No.6,449,749, U.S. Pat. No. 6,475,871, and U.S. Pat. No. 6,507,942) of thedie are devoted to test structures that are measured in order to detectand isolate process defects contributing to low yield or lowperformance. These die are manufactured in place of product chip die andare physically probed to yield the process control information. Whilethese techniques are useful to isolate random process defect types, theyare only a substitute for direct measurements inside of the chip. Theyare difficult or impossible to integrate into the active area of a chipbecause they require physical contact to establish electrical contact,and because of the large real estate required to define the circuitsused to isolate the defects, or in some cases, due to the large realestate required to catch low defect density defects. Alternately, somemethods rely on the placement of similar structures inside of the activedie area, but are placed there for post-packaged dies (U.S. Pat. No.6,553,545). In this application, the structures are either testedthrough the package, or destructive failure analysis techniques are usedto delayer the packaged die to get at the devices. For the systematicdefect variation being addressed by the current application,measurements can be accomplished when the die are on the wafers, processmodules with excessive intra-chip variation can be ascertained, nophysical contact is necessary, and is small enough to integrate insideof the chip. Finally, other applications (U.S. Pat. No. 6,686,755) haveexplored the use of contact-less signal detection to probe chipfunctionality, where the chips are placed in conventional carriers andpowered and stimulated through conventional contact probe techniques.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a simplified block diagram of a system for obtainingevaluation information on how a wafer is fabricated, under an embodimentof the invention.

FIG. 1B illustrates locations on a wafer where measurements ofperformance parameters may be made.

FIG. 1C illustrates a chip on which performance parameter measurementsare made for purpose of evaluating fabrication of a wafer and/or of thechip.

FIG. 2 illustrates a method for evaluating how process steps in afabrication of a chip are performed, under an embodiment of theinvention.

FIG. 3 illustrates process steps which may be evaluated based oncorresponding fabrication characteristics that are associated withmeasurements of performance parameters within the chip.

FIG. 4 is a block diagram of how a process-sensitive test structure maybe used to evaluate a fabrication of a wafer, under an embodiment.

FIG. 5 illustrates a method for using process-sensitive test structuresto determine evaluation information about a fabrication of a wafer,under an embodiment.

FIG. 6 illustrates another method for using process-sensitive teststructures to determine evaluation information about a fabrication of awafer, under an embodiment.

FIG. 7A is a diagram illustrating aspects of a suitable building blockcircuit element for CMOS technology, under an embodiment.

FIG. 7B illustrates a process-sensitive test structure composed ofidentical building blocks that can be formed on an active portion of asemiconductor component

FIGS. 7C and 7D illustrate use of a delay sensitive element in a circuitcomprising one or more inverters

FIG. 8 is a representative example of how a method such as describedwith FIG. 6 may be performed.

FIGS. 9A-9E illustrate different circuit elements that can be formed onthe active portion of a semiconductor component and configured for thepurpose of making time-delay or phase shift to exaggerate theperformance sensitivity of these circuit elements to process steps.

With regard to FIG. 9A, the circuit elements include length and widthPSTS

With regard to FIG. 9B, the circuit elements include interconnectresistance PSTS

With regard to FIG. 9C, the circuit elements include interconnectcapacitance PSTS.

With regard to FIG. 9D, the circuit elements include gate capacitancePSTS, with consideration for width/length rations.

With regard to FIG. 9E, circuit elements include gate capacitance PSTS,with consideration for use of equivalent capacitances.

FIG. 10 illustrates a process-sensitive test structure that can beformed on the active portion of a semiconductor component and configuredfor the purpose of making time-delay or phase shift measurements toexaggerate and correlate the offset between CD SEM measurements andelectrical CD measurements.

FIG. 11 is a representative block diagram illustrating a scheme topopulate a partially fabricated chip with test structures that can thenbe used to measure performance parameters correlated with fabricationsteps.

FIG. 12 illustrates a method for using a test structure when the testsignal and power for that test structure are generated from within achip on a wafer.

FIG. 13A illustrates a circuit for regulating an input voltage createdby an external power source.

FIG. 13B illustrates a circuit for regulating an input voltage createdby an external power source while enabling feedback to the laser source.

FIGS. 14A and 14B illustrate an embodiment in which a thermoelectricmechanism is coupled with a laser or other energy source in order tocause in-chip generation of a power or test signal.

FIG. 15 illustrates a system for detecting and measuring electricalactivity from designated locations on a wafer, according to anembodiment.

FIG. 16 provides additional details for an apparatus that induces andmeasures electrical activity from within designated locations of a chip,according to one embodiment of the invention.

FIG. 17 illustrates a chip configured according to an embodiment of theinvention.

FIG. 18 describes a method for operating an apparatus such as describedin FIGS. 15-16, according to one embodiment of the invention.

In the drawings, the same reference numbers identify identical orsubstantially similar elements or acts. To easily identify thediscussion of any particular element or act, the most significant digitor digits in a reference number refer to the Figure number in which thatelement is first introduced. Any modifications necessary to the Figurescan be readily made by one skilled in the relevant art based on thedetailed description provided herein.

DETAILED DESCRIPTION

Overview

Embodiments described herein provide systems, methods, structures andother techniques for analyzing the fabrication of a wafer. Inparticular, embodiments described herein provide for obtaininginformation about how the wafer's fabrication is performed from numerouslocations on the wafer with co-located power, test and detectionstructures, including from within the active regions of individual diethat comprise the wafer. The information is obtained in a non-contact,non-invasive manner that does not affect the usability of the waferand/or suitability of the wafer for subsequent wafer processing. Theresults and attributes of fabrication steps or sequences, includingprocess variations that occur inside the active regions of the die orelsewhere in the wafer, may be detected, evaluated and/or analyzed.

Wafer Fabrication Evaluation and Analysis Using Performance Parameters

Embodiments of the invention provide for making in-chip measurements ofcertain performance-related parameters (“performance parameters”) forpurpose of evaluating the fabrication of a chip or wafer. The chip maycorrespond to the product that results when individual die of a wafer ordiced and separated in a post-fabrication phase. Numerous chips mayresult from a diced wafer. The die corresponds to an area between scribelines of a wafer. An active portion of the die is where active, discreteand integrated circuit elements that will be part of the chips'functionality may reside.

In one embodiment, a specific performance parameter is interpreted from,or otherwise based on an observed electrical activity occurring atpredetermined locations within the chip or die of the wafer. A specificelectrical activity may be induced or inherent to these designatedlocations and the performance parameter that is interpreted or based onthe activity relates to a characteristic of the chip, die or wafer.Measurement variance of a plurality of these measurements is referred toas “variance”. In an embodiment, a determination of performanceparameters at designated locations is indicative of a characteristic ofthe die. Measurement variance of a plurality of these measurements inwhich the location of where the measurement was collected from isreferred to as “spatial variance”, and is often useful to identify, orfingerprint, a specific process step. In particular, the performanceparameters are indicative of a characteristic of the device, die, scribeor wafer that is attributable to one or more of the processes in thefabrication of the wafer.

Because the performance parameters specify characteristics that areattributes of good performing chips or are attributable to one or moresteps in the fabrication sequence, the measurements of the performanceparameters provide information that is effective for evaluating thefabrication of the chip. For example, according to an embodiment, themeasurements of the performance parameters may correlate to a portion ofthe die having a specific unwanted or unexpected result from theperformance of a fabrication step or sequence. This result may besufficiently isolated from other properties of the chip, such that thespecific fabrication step or sequence that contributed to the value ofthe performance parameter may be identified. Furthermore, it may bepossible to determine information about how the identified step orsequence performed from the value of one or more performance parametersin the chip.

According to one embodiment, electrical activity is induced fromdesignated locations on the wafer. The electrical activity may beinduced such that the interpreted performance parameter has a value thatis exaggerated in the presence or absence of properties that result fromone or more specific fabrication steps. As will be described, one mannerfor inducing electrical activity is to use specialized,process-sensitive test structures to process test signals. Numeroustypes of electrical activity can be induced and/or measured to evaluatefabrication, including for example, optical, optoelectronic, and radiofrequency signals. In an embodiment, the use of such test structures mayyield performance parameter values that are dependent almost exclusivelyon one or more fabrication steps, or at least on a distinct set offabrication steps. Other embodiments may use non-test structures (suchas product devices) known to produce, emit or exhibit specificproperties as a result of certain physical attributes being present onthe active portion of the chip.

According to another embodiment, electrical activity may be inherent atdesignated locations on the wafer, and performance parameters may bedetermined from the inherent activity which have correlation to thefabrication of the wafer. For example, a sensitive measurement apparatusmay be used to measure performance parameters from circuit elements thatwould be used in the normal operation of the chip, where the measuredperformance parameters spatial variation can be correlated to a specificstep or sequence. In these cases, the specific fabrication step orsequence that is correlated or otherwise identifiable from themeasurement may be known to be the result of, caused by, or otherwiseaffected by specific process steps in the fabrication, or by a manner inwhich the fabrication was implemented.

FIG. 1A is a block diagram depicting an embodiment of the invention. InFIG. 1A, a probe apparatus 102 applies a stimulus 101 over designatedlocations of a wafer 110, and in response to the stimulus 101, detectsand measures electrical activity 105 from the designated locations. Thewafer 110 may be either partially or completely fabricated. Theelectrical activity may be detected with any one or more of thefollowing: optoelectronic photonic effects and signals (e.g. hotelectron photon emissions, charge-induced electro-absorption orelectro-rectification), voltage contrast phenomena, electromagneticsignals (such as radio frequency or inductive signals), and/or othersignals or affects that are detectable through a contact-less medium. Aswill be described, the electrical activity 105 may correspond to one ormore chip-specific performance parameters 106. The detected and measuredperformance parameters 106 may be reviewed, analyzed or otherwiseevaluated in order to determine a result, variation, or characteristicindicative of the quality of the chip, die and/or wafer, or one or morespecific processes, steps, or process step sequences in the fabricationof the wafer 110. The detected and measured performance parameters 106may also detect variation on different locations of the die or waferthat are induced by design density variations. According to oneembodiment, the performance parameters yield information about some, butnot all fabrication processes performed prior to the electrical activitybeing detected. Thus, such an embodiment enables specific fabricationprocesses that cause process variations to be identified and evaluated.

In one embodiment, probe apparatus 102 causes the electrical activity105 to occur by directing a signal or an energy beam at the designatedlocations of the wafer 110. Designated elements on the wafer 110 maygenerate or exhibit the electrical activity 105 in response to thisapplied stimulus 101. The resulting electrical activity 105 isinterpreted by probe apparatus 102 as one or more performance parameters106. Examples of performance parameters that can be interpreted fromelectrical activity 105 include measurements of gate switching speed,propagation delays, phase shifts and/or slew rates, measured at thedesignated locations of the wafer 110.

An analysis may be performed to relate the performance parameters 106 tospecific processes, process steps, and process step sequences, includingtools or modules used to perform the processes and steps. This mayinvolve analyzing location variations, or spatial variation, ofattributes or results of specific fabrication steps or sequences onwafer regions, including on active regions of individual die. In anembodiment, the performance parameters may be used to obtain evaluationinformation 107 for evaluating a result, implementation, effectiveness,or performance of a fabrication step, sequence or process including howclosely the results of the fabrication step or process were predicted.The evaluation information 107 may be based on comparing performanceparameters values at different locations of the wafer 110, determiningspatial or other kinds of variations in the performance parameter valuesover regions of the wafer 110, and other variances. More particularly,the evaluation information 107 and other analysis of the performanceparameter values may involve comparing performance parameter values atdifferent locations within the same chip, on internal locations ofdifferent chips, between scribe regions and one or more intra-chiplocations, as well as other comparative points on the wafer 110.

A tool 109, such as a computer system, module, or software/systemsprogram/module, may be used to perform the analysis that determines theevaluation information 107 from the performance parameters 106. The tool109 may be part of a data acquisition system. In particular, theanalysis may correlate the performance parameters 106 to characteristicsof one or more fabrication steps 108 or processes. For example, tool 109may correlate the performance parameters 106 to fabrication steps thatresult in and from the presence of resistivity and capacitancevariations in metals, or to the presence of variations in gate lengthsand trench shapes. In addition, the identification of fabrication steps108 may implicate a module or tool used in performing that fabricationsstep. As such, identification of fabrication steps 108 that areconsistent with the analysis of the performance parameter indicates, oryields other evaluation information 107 that can be used to determineaspects of the overall fabrication process. The evaluation information107 may include any data that, either by itself or in combination withother data or information, is informative as to how one or morefabrication steps were performed. For example, the evaluationinformation 107 may be statistical in nature, so that multiple wafersare fabricated before a statistical distribution derived from theevaluation information is indicative of a process variation or otheraspect of how certain fabrication steps or processes were performed. Asanother example, the evaluation information 107 from one region of onewafer may be determinative of how a particular fabrication step orsequence was performed. The evaluation information 107 may also includecalibration data, which can be used to gain perspective of otherevaluation information. Because the evaluation information 107 may bederived from any location on wafer 110 (including as described in FIG.1B, within the active region of a die), an embodiment provides thatprocess variations and faults that affect in-chip devices may be morereadily identified. However, the evaluation information 107 may also beused to identify fabrication steps that were performed adequately, inorder to isolate other fabrication steps that are problematic throughelimination.

FIG. 1B illustrates how fabrication may be analyzed on different regionsof the wafer 110, according to an embodiment. In FIG. 1B, wafer 110 isassumed to be in a partially fabricated state. The wafer 110 includes aplurality of scribe regions 121 that define a plurality of die 127. Adicing channel 125 may also be formed in the scribe regions 121 inbetween rows and columns of die 127. Each die 127 may include an activearea 128 (e.g. chip) and an inactive area 129. The scribe lines 123serve as boundaries between adjacent die 127.

According to an embodiment, electrical activity may be observed ondesignated locations of the wafer 110. These designated locationsinclude scribe line locations 134, die channel locations 135, active dielocations 136, and inactive die locations 138. The scribe line locations134 may be sufficiently proximate to the active area 128 of thecorresponding die that those scribe line locations 134 fall within theresidual die material of the chip, after the wafer 110 is diced. In anembodiment, the designated locations may also include active dielocations 148 of perimeter die elements 146. The perimeter die elements146 often are “throw-away” elements, as their presence on the edge ofthe wafer prohibit full functional operation of that die as a chip.However, embodiments described herein use the perimeter die elements 146to measure performance parameters, and to evaluate fabrication,particularly on locations of the wafer 110 that approach the wafer'sperimeter.

In an embodiment, electrical activity 105 is detected and interpreted asa particular kind of performance parameter at locations that includescribe line locations 134, die channel locations 135, active dielocations 136, inactive die locations 138, and/or active die locations148 of perimeter die 146. Comparisons of the different performanceparameter values may be made in order to determine evaluationinformation. For example, comparisons of performance parameter valuesmay be made amongst active die locations 136 of the same die 127 inorder to determine process variations on that region of the wafer 110.The comparisons of performance parameter values may also be made amongstactive die locations 136 of different die, amongst or between inactivedie locations 138 and active die locations 136 of the same or differentdie, and amongst scribe line locations 134. In addition, certaincomparisons of performance parameter values may be made between scribeline locations 134 and adjacent active die locations 136 for purpose ofcalibrating evaluation information, and other purposes. Active dielocations 158 of perimeter die 146 may show how specific fabricationsteps were performed on the periphery of the wafer 110. On occasion,process variations could be more severe on the wafer perimeter.

In an embodiment, electrical activity 105 is induced to occur, at leastto the levels detected and measured, in a manner that enablesperformance parameters derived from the electrical activity to beexaggerated (e.g. amplified or filtered), depending primarily on one ormore steps in the fabrication of the wafer 110 at the particularlocation where the performance parameter is measured. Thus, theperformance parameters determined from the electrical activity 105represent an underlying fabrication characteristic of the individual die150 and/or wafer 110. There may be hundred, thousands, or even more suchmeasurements made on any particular wafer 110. Furthermore, suchmeasurements may be made repeatedly, after completion of one or morefabrication processes. It is also possible to use the same exactlocations to repeatedly measure for performance parameters. Furthermore,in contrast to past approaches, performance parameters are determinedfrom measurements of electrical activity at active die locations 138 ofwafer 110, as opposed to physical measurements and/or electrical-testsconducted in the non-active areas of the chip or off-chip/die in thescribe. The present technique allows direct measurement of performanceparameters in the active area of individual die, in contrast to physicalmeasurements in the active area which at best infer indirect correlationto the final performance of the device and chip, and thereby the processrobustness. Embodiments then relate performance parameters and theirvariations to isolated process step(s) and/or sequence(s).

Different values of performance parameters may be evaluated or analyzedin order to obtain information, an indication, or even anidentification, of specific processes in the fabrication of the wafer110. These processes may result in, for example, a particular physicalor electrical property, and the presence of this property at aparticular location may be reflected in the value of the performanceparameter. In one embodiment, the value of each determined performanceparameter is primarily dependent on the performance of a fabricationstep or process. Alternatively, a correlation may be made between aperformance parameter and a fabrication characteristic that is known tobe related to a particular fabrication step, process or technique. Thevalues of the performance parameter at different locations on the wafermay be analyzed to determine an understanding of how the fabricationcharacteristic exists on a particular chip. This understanding may thenbe used to evaluate the related fabrication process, includingdetermining how that process was performed, what results it yielded, andwhether the results matched what was intended.

FIG. 1C illustrates how performance parameter values may be used withinthe confines of a die in order to evaluate fabrication of the die and/orits wafer. In FIG. 1C, die 150 includes an active region 152 and aninactive region 154. Different classes of performance parameters may beidentified and measured on the die 150, and in particular, in the activeregion 152. This is in contrast to some conventional approaches, whichtake measurements of performance parameters only in the scribe. In oneembodiment, each class of performance parameter corresponds to one ormore fabrication steps, processes or characteristics. Different classesof performance parameters may be measured from the wafer die 150 byinducing electrical activity of a specific type from designatedlocations of the die.

Performance parameters may be analyzed by determining a variance amongstmultiple performance parameters measured from the die 150 at differentlocations. In one embodiment, a spatial variance is determined for aparticular class of performance parameters disposed within the activeregion 152. In another embodiment, the analysis involves comparingperformance parameters of different classes, such as in the case ofelectrical activity resulting from structures disposed on die 150 andhaving different designs and/or configurations. For example, a spatialvariance of the values of a class of performance parameters is used todetermine information about the fabrication processes used to form thedie 150.

Still further, different classes of performance parameter measurementsmay be used to formulate a performance map of the die 150. The map mayprovide an indication of a value or presence of different fabricationcharacteristics on the die 150. As such, the map may provide informationfor evaluating numerous processes in the fabrication of die 150 or itswafer, both before and after their respective fabrication completions.

The locations of the die 150, or its wafer 110, in which performanceparameter values are measured may be provided mechanisms, structures,and/or integrated circuit elements that exaggerate performance parametermeasurements based on the presence or absence of one or morecharacteristics of fabrication steps or processes. In one embodiment,the value of one performance parameter may be primarily attributable toone fabrication step, or a particular subset of the fabrication steps.

In an embodiment such as shown by FIG. 1C, designated locations of thedie 150 are selected for purpose of making measurements ofperformance-related parameters. The designated locations are labeled insets (A₁-A_(n), B₁-B_(N) . . . D₁-D_(N) etc.). At each set (e.g.A₁-A_(n)), a particular performance parameter is measured, where eachperformance parameter in the set is based on a particular kind ofelectrical activity. Each set of performance parameters may correspondto a class, in that the measurements are made from structures having acommon design or feature, and/or yielding the same fabrication stepdependence. In particular, each class of performance parameters may bemeasured from electrical activity that is induced or designed toaccentuate one fabrication step or sequence over other fabricationsteps/sequences. In fact, this electrical activity can be induced ordesigned to be independent of other fabrication steps, so that theperformance parameter interpreted from that electrical activity isdependent almost exclusively on one (or possibly more) fabricationstep(s) or sequence(s). In one simplified example, a common teststructure may be disposed in the active region 152 of the die 150 andactivated by a stimulus and/or other signal. A resulting electricalactivity may be detected and measured as one of the performanceparameters in the set A₁-A_(n). In one example, if the fabrication ofthe wafer is uniform, there is no discernible difference in valueamongst the performance parameters in the set. If, however, there is aspatial process variation, then there may be discernable differences(perhaps in the form of a gradient or trend) amongst the performanceparameter values. Performance parameter values from the inactive portion154 of the die 150 may also be used, particularly for other purposeslike providing a baseline or calibrative set of values for theperformance parameter values in the active region 152.

In an embodiment, the value of each performance parameter may beinterpreted from electrical activity that results from inducing and/orsimulating a specialized test structure. The structures may be designedto exhibit performance parameters in direct relation to one or morefabrication step or sequence on the die 150. Furthermore, the design ofthe specialized structures may be such that there is no dependence inthe value of the exhibited performance parameters on other fabricationsteps or sequences in the set.

For example, one class of structures that generate a particular signalon activation may be used to determine a particular performanceparameter value that is known to amplify or otherwise be out of a rangein values in the presence of a specific fabrication characteristic (e.g.capacitance or gate length variations that exceed a certain amount). Inthe same example, the design of the structure may minimize or filter outthe effects of characteristics of other fabrication steps or sequencesin that such characteristics may have a relatively small orinsignificant effect on the value of the performance parameter. Asanother example, the performance parameters may correspond to electricalactivity measured from a device that yields a high-value for thatmeasurement when extra metal, or capacitance caused by too much metal,is present on the chip.

The relationship between the performance parameters and the identifiedfabrication steps or sequence may be based on a variance of the measuredperformance parameters. The variance may be based on space, speed, orother variables affecting the performance of the particular die 150.

Various advantages may be provided by an embodiment such as describedwith FIGS. 1A-1C. Among these advantages, determining performanceparameters that are closely related to fabrication steps enablesengineers, designers, and yield managers to identify certain fabricationsteps (including tools or modules used in the steps) that areproblematic before the fabrication is completed. This allows theprocesses and techniques used in the fabrication to be studied andimproved upon in a more effective manner. For example, flaws in oneprocess of the fabrication may be detected and improved upon in betweenfabrication of individual wafers. Each subsequent wafer may then turnout a better yield. For example, in the past, design flaws oftenresulted in some chips on the wafer being marketed as a lowerperformance product, rather than being marketed at the performance levelthat was intended. This reduces the value of individual chipsconsiderably. Under traditional approaches, the evaluation of waferfabrication was an expensive and time-consuming process, often requiringnumerous samples for statistical analysis. In contrast, embodiments ofthe invention enable “on-the-fly” detection of fabrication problems, andan opportunity to correct specific fabrication processes beforefabrication of another wafer occurs. While statistical analysis maystill be used, embodiments of the invention enable the statistics toisolate specific fabrication processes at a much quicker rate thanprevious approaches. Furthermore, the data is determined from within thedie of the wafer, so that the problems in the fabrication processes arebetter detected and understood. Also, the monitoring, detection,isolation and analysis are done in-line and during the process wherecorrective and measures and appropriate adjustments could be made.

FIG. 2 illustrates a method for evaluating a fabrication of a wafer, dieor chip, under an embodiment of the invention. A method described withFIG. 2 may be performed in conjunction with the use of measuredperformance parameters, such as described with FIGS. 1A-1C. As such,reference to numerals in FIGS. 1A-1C are intended to illustrate asuitable context for performing such a method.

Initially, in step 200, a wafer has completed one or more fabricationsteps or processes. Next, step 210 provides that performance parametersare measured at various locations of a wafer 110, including within theactive regions 152 of the die 150. For example, probe apparatus 102 maybe used to make in-chip measurements of electrical activity at variouslocations. Mechanisms, such as test structures, that are designed orotherwise known to exhibit electrical activity from which performanceparameters may be determined are positioned selectively within the die150. The performance parameters may be measured by activating suchmechanisms with energy, stimulus and/or test signals, and furthermore,by detecting (measure) the electrical activity by non-contactelectrical, optoelectronic and/or electromagnetic means frompredetermined locations within each element and/or output signal pads.

Step 220 provides that the variance of performance parameter valuesmeasured in step 210 is determined. In one embodiment, the variance isspatial, and may be apply across the wafer 110 and die 150, includingthe die's active region 152. A spatial variance of such values indicateshow the value of the common performance parameter (e.g. an output from acommon test structure, or a detected emission from a specific on-chipcomponent) changes from one location to another, whether the designatedlocation is in-die or distributed amongst numerous die and scriberegions 121. Alternatively, the variance may be based on some otherparameter, such as switching speed or slew rate.

In an embodiment, the spatial variance of a measured performanceparameter provides an analysis tool for isolating specificfabrication-related properties that adversely and/or unpredictablyimpact chip performance. With respect to in-die analysis, theperformance of each die may be characterized as a function of numerousindependent factors, where each factor is based on a physical attributeof that die. The performance of a fabrication process or step, whichyields a spatially variant physical property across the die 150 or itswafer 110, is an example of a process variation.

According to one embodiment, step 230 provides that spatial variances ofspecific physical properties on the wafer 110 and/or die 150 caused byprocess variations are used to evaluate how the wafer 110 is fabricated.The performance parameters may be measured from electrical activity thatis induced or designed to exaggerate the affects of specific processvariations. An analysis of this principal may be provided as follows.Consider a function F describing the circuit performance P of a device.The performance P is dependent on a number of physical parameters thatdescribe the geometry and electrical properties of the materials used inthe fabrication sequence:P=F(L, W, T _(ox) , I _(SDE), . . . )  (1)where, for example, L and W are device gate length and width,respectively, T_(ox) is the gate oxide thickness, and I_(SDE) is thesource-drain extension implant dose. P is also dependent on otherparameters such as interconnect parameters, which are omitted here forconciseness. A fabrication process variation, which corresponds to avariance of a physical property produced by that process or step,induces a measurable variance in P that can be approximated to firstorder by:ΔP| _(sl) ≈∂F/∂L·ΔL| _(sl) +∂F/∂W·ΔW| _(sl) +∂F/∂T _(ox)·ΔT_(ox)|_(sl)+. . .  (2)evaluated after a specific process step s and at a specific location l,and where ∂F/∂X is the response of F to the influence of variable X (L,W, etc. . . . ).

The equation provides that a variance of a performance of devices on thedie or chip may be expressed as a function of the variance of certainattributes or results from steps of processes in the fabrication of thewafer where the variance is evaluated after a process step or locationor both. The features on the wafer 110 or die 150 that cause theelectrical activity from which performance parameter are measured mayeach be selected and structured so that only one of the parameters issensitive to a specific process variance at a time. This means that thevariance of the common performance parameter will be proportional, or atleast have some direct relationship to, to the corresponding processvariance. For example, a process variation may be location based, inthat a process is not uniformly performed over a region or entirety of awafer. There may also be a variation in how a step is performed in thefabrication of one or more wafers.

In an embodiment, step 230 includes associating a property orcharacteristic of a fabrication step with the spatial variance of theperformance parameter. This step may be done before or after themeasurements are made.

In an embodiment, a determination is made in step 240 as to whether theindicated process variations are acceptable. If the process variationsare acceptable, the fabrication of the wafer 110 is continued in step250, and other fabrication steps or processes are performed. If theprocess variations are not acceptable, then corrective action is takenin step 260. The corrective action may be in the form of repeatingprocess steps of step 200. Alternatively, the corrective action maycorrespond to stopping the fabrication, or modifying the performance ofone or more fabrication steps for subsequent wafers. Alternatively, thecorrective action may allow the fabrication to continue, but under amonitored state where data for correcting the fabrication is collectedand analyzed. It may also be the case where a fabrication characteristicgoes undetected until the end of the line. Rather than repeating theexcursion for the next line, the operator can assess fabrication stepsor processes that require minor modification, so that the excursionwould be eliminated or reduced going forward.

As an alternative to determining spatial variances, other types ofintra-die excursions may be identified. For example, embodiments of theinvention may detect an unacceptable result or attribute of afabrication step that is uniformly distributed through the entire waferor die.

FIG. 3 is a block diagram that illustrates how performance parameters,measured from within the chip or die in the wafer, may be used toevaluate the implementation of some basic steps or processes that areused in the fabrication of a semiconductor wafer. While there areseveral other kinds of processes that are normally performed infabrication, FIG. 3 illustrates a lithography process 310, an etchprocess 320, a deposition process 330, a polishing process 340 (such aschemical-mechanical polishing), and an interconnect process 350. Theseprocesses form some of the overall process used in the manufacturing ofa semiconductor wafer. The processes shown in FIG. 3 may be performed invarious different orders and repeated, as required by a particularfabrication protocol or recipe.

According to an embodiment, one or more of the fabrication processes orsteps may be associated with a set of one or more characteristics314-318. The fabrication characteristics 314-318, including resultsand/or attributes from the performance of one or more fabrication steps,associated with two or more processes may overlap. The fabricationcharacteristics 314-318, when considered individually or in combinationwith other fabrication characteristics, may correspond to a feature oraspect on the wafer or die that identify how the processes or stepsassociated with those fabrication characteristics are performed,particularly in view of the other fabrication processes. The fabricationcharacteristics 314-318 are determined from performance parametermeasurements. It follows that each of the processes illustrated in FIG.3 may be evaluated by measuring performance parameters from electricalactivity observed at designated locations of a wafer 110 (including inthe die or scribe regions). Values of these performance parameters maybe evaluated or analyzed to relate to particular fabricationcharacteristics. The fabrication characteristics may then be related toprocesses such as illustrated in FIG. 3, or sub-processes thereof.

The measurements may be made either during the fabrication, or aftercompletion of the fabrication. In some cases, the performance parameterscan be measured after the first metal layer has been deposited on thewafer 110. In one embodiment, measurements of performance parameters aremade repeatedly after completion of certain processes, beginning withcompletion of the first metal layer. In an embodiment the iterativeprocess could allow the operator to observe and monitor variations ofperformance parameters at the same location(s) through and at each stepof the process, and take remedial actions to adjust according toexpected results for better yields and performance.

In an example provided with FIG. 3, a function of the set A ofperformance parameters (see FIG. 1B) within an individual die of thewafer may be used to evaluate the lithography process 310 and etchprocess 320 in the fabrication. For example, the function of the set Amay yield a variance, value or other indication of a fabricationcharacteristic that is known to be the result of the lithography process310 and etch process 320. Similarly, a function of the set B ofperformance parameters may be used to evaluate the deposition process330, a function of the set C of performance parameters may be used toevaluate the polishing process 340, and a function of the step D ofperformance parameters may be used to evaluate the interconnect process350. This description is only an illustrative example and manyvariations are possible. For example, it is possible for one function ofperformance parameters of one kind to be used jointly with anotherfunction of performance parameters of another kind to evaluate one ormore steps in the fabrication. How results of particular functions mayrelate and provide information on a particular fabrication process mayrange from the simple (the value of a particular fabricationcharacteristic is exceeded or the parameter variance is not withinspecified limits) to the more complex (in-chip variance of onefabrication characteristic is unacceptable in view of the in-chipvariance of another fabrication characteristic).

Similarly, various functions may be implemented on a set of performanceparameters. In an embodiment such as shown in FIG. 3, a mathematicalfunction, such as Equation 2, is used on measured values of a particularperformance parameter at different locations in the die of the wafer inorder to isolate one type physical property (or other fabricationcharacteristic) from another type. The fabrication characteristic isisolated to correspond to one of the processes shown in FIG. 3. Othertypes of functions are possible. For example, one function may requirethat measured performance parameters on individual die to be compared toone another and to the highest performance parameter value on the wafer.Another function may require that one or more of a set of measuredperformance parameters (e.g. A₁ in the set of A) be compared to a known,expected or desired constant. If the comparison is unfavorable (e.g.beyond the expected and/or acceptable range), evaluation informationabout a corresponding step may be determined.

It is also possible for two functions to be performed on one set ofparameters to identify evaluation information for different or the sameprocesses. For example, lithography process 310 may be evaluated by theparameters of set A, using and algorithm to determine the composite of Awithin the die. In addition, each performance parameter value iscompared to a designated constant for favorable comparison. In thisexample, each of the two functions provides evaluation information onhow a particular fabrication process is performed.

To provide another example, a variance of each performance parameter ina class may be compared to a variance of a baseline class. The baselineclass may be based on performance parameters that have do not showvariance to any particular fabrication step or location.

The functions performed by the different performance parameters may beapplied to die or wafer-level analysis of the fabrication. To apply to awafer-level analysis, the performance parameter value may be measuredfrom different die on the wafer 110.

Some specific examples of performance parameters, and how they relate toprocesses in the fabrication of the wafer 110, are provided as follows.A performance parameter may correspond to a measurement of resistivity.Chip performance may be adversely affected, for example, when thepolishing process 340 is performed on the wafer 110 resulting in extra,or non-uniform, polishing—or thinning—in high-density regions of the diewithin the wafer increasing the effective resistivity of theinterconnects in those regions. In an embodiment, circuit elements thatare sensitive to interconnect resistivity fluctuations (eitherexceptionally high or low) may be planted or located on the die todetermine whether the chip or wafer has unwanted resistivity variation.The output from these circuit elements may be viewed to determine howresistivity causes delays in the output. In particular, these elementsmay be planted or located in areas where high-density or low-density ofcircuit elements exist, and where deviations in resistivity are thusmore likely. By measuring output from a circuit element that accentuatesresistivity, it is possible to isolate on that element the chips's andwafer's resistivity property, at least at or near the location of thatcircuit element. As an example, one or more functions may be formulatedthat incorporate a spatial variance of the resistivity and/or acomparison of measured values of resistivity to known or desired values.Common structures that accentuate the presence of unwanted resistance,but otherwise should have nearly identical switching speeds whendisposed on the die, may be used to evaluate how much unacceptablevariance in resistance is on the active area. In this way, parametersthat indicate resistivity of a particular region on the die may provideevaluation information about, for example, the polishing process 340.

Another example of a performance parameter a measurement of timingdelays and/or switching speeds to a circuit element that has extremecapacitance values. The presence of unwanted capacitance may have anexaggerated effect on such circuit elements. By measuring switchingspeeds of circuit elements that are grossly affected by unwantedcapacitance, a composition of values or formula may be developed forpurpose of evaluating one of the process steps. For example, metaldeposition in process 330 may be evaluated based on switching speeds ofcircuit elements that are used to detect capacitance.

Process Sensitive Test Structures for Evaluating Fabrication Processes

Process-sensitive test structures (PSTS) refers to structures that aresensitive in electrical performance under stimuli to a particular stepand/or sequence of steps in the fabrication of a wafer. In anembodiment, a PSTS has exaggerated sensitivity to the performance orresults of one set of fabrication steps, and much less sensitivity toresults or performance of any other fabrication step. The sensitivity ofa PSTS may extend to electrical affects resulting from the performanceof one or more fabrication steps, including but not limited to aresistance or capacitance on a region of the wafer or die. Thesensitivity of the PSTS may also extend to the physical attributes, suchas gate width or length, impacted or resulted from a fabrication step. APSTS may be structured so that the presence of a particular attribute inthe die or wafer that stems from a fabrication step causes the PSTS tooutput or exhibit electrical activity that is associated with that stepor attribute. As discussed in previous embodiments, the electricalactivity can be measured as a performance parameter that can be analyzedto yield information about a fabrication step, sequence or process.

Prior art techniques provide for test structures that are placed in thescribe areas of wafers, are measured with testers that make mechanicalcontact, to produce process related parameters that correlate tovariations in the scribe areas. Since the scribe areas are known to be apoor correlate to local variation inside the active die areas of thewafer—outside of the scribe areas, process variation measured in thescribe is a poor correlate to process variation in the active die areasof the wafer. There have been previous attempts to use test structuresinside the die of a wafer. However, these approaches rely on measuringthe test structures only after manufacturing of the wafer is completed.As such, the test structures can only measure process variations from acompletely fabricated wafer.

In contrast to such past approaches, embodiments described hereinprovide for test structures that can be placed inside the active andcritical part of the die during the fabrication process. The teststructures may be stimulated in a non-contact manner to exhibit orproduce electrical properties that can then be measured. Themeasurements of the electrical activity from the test structures maythen be used to evaluate fabrication of the wafer while the fabricationis ongoing. As such, the structures provide a mechanism for using directmeasurements to determine information about the effects of processvariations inside the die. Embodiments described herein provide forprocess variations to be measured for partially processed wafers. Thisgreatly accelerates the availability of specific process variationinformation, so that the information is available during the fabricationprocess, when corrective action can be taken.

In one embodiment, at least some of the PSTS that are placed on thewafer are sensitive to a specific fabrication step or sequence. The samePSTS may also be insensitive to other fabrication steps in thefabrication process. This negative association serves to isolate whatfabrication steps the electrical activity of the PSTS is dependent on,so that the electrical activity of the PSTS provides a clear marker onone fabrication step or sequence.

FIG. 4 is a basic block diagram illustrating a PSTS 410, according to anembodiment. The PSTS 410 may be configured so that a particularsensitivity to a desired fabrication step or sequence is made inherentin the structure. In an embodiment, a power 412 and a test signal 414are inputs to PSTS 410. The power signal 412 stimulates the PSTS 410,while the test signal 414 triggers the PSTS. In an embodiment, when bothpower 412 and the tests signal 414 are supplied, PSTS 410 is activatedto yield an output 422. In certain cases, it is also possible toactivate the PSTS 410 by only stimulating or triggering the PSTS. In anembodiment, an incidental signal or series of node-to-node signals 424,internal to the PSTS 410, is detected when the PSTS 410 is activated.For example, the signal 424 may correspond to photons produced fromtransistors of the PSTS 410 as elements of the PSTS switch on or off,while signal 422 may correspond to an electrical signal aggregated frommany nodes that reflects how the test signal 414 was modified by thePSTS. One or both the output 422 and the node-to-node signal 424 areused to determine one or more performance parameters. Examples ofperformance parameters include transistor switching speed, circuittiming, and slew rates of transistors and switches within the PSTS. Dueto the structure of PSTS 410, the values of the performance parameters,as interpreted from output 422 and node-to-node signals 424, aredirectly dependent on particular fabrication-related attribute. Forexample, a circuit element may be used to determine how much incidentalresistance (e.g. from contamination of a metal deposition) is formed onthe wafer in high-density areas. Therefore, the circuit element's outputis adversely affected by small amounts of unwanted resistance.

The output 422 and incidental signals 424 of PSTS 410 are used to obtainor formulate evaluation information 432 for evaluating the fabricationof the die or wafer. For example, if the output 422 is dependent on aphysical property that is the result of a particular fabricationprocess, a correlation may be drawn between various values of the outputwithin the chip and a specific process step. The correlation may requiredetermining a variance of the output, or a comparison of discrete valuesof the output to desired or known values. The variance of the output maybe used to determine a process variations and excursions.

As will be described in greater detail, various circuits and structurescan be used for PSTS 410. A class of a particular PSTS structure maycorrespond to PSTS structures that have a common design. Other variablesmay be used to designate a class of PSTS structures. For example, aclass of PSTS structures may correspond to all structures that are tiedor otherwise indicative of a particular fabrication step, process orresult. Numerous classes of PSTS structures may be distributed on awafer, and inside the die of the wafer, particularly in the activeregions of the die. Several PSTS structures of a particular class may beprovided within the active regions of the die.

FIG. 5 illustrates a method for using test structures to obtaininformation about the fabrication of a chip or wafer. The informationmay be used to determine whether a particular fabrication step orsequence is being performed and providing results as expected.

Step 510 provides that locations for test structures are identified.These locations may correspond to locations on a wafer, on a die, and indiscrete locations within the active regions of the die and could alsobe placed in the scribe for comparison the e-test structures typicallyplaced there for in-line electrical contact testing. Depending on thetest structure and the need, multiple test structures may, for example,be distributed on a single die.

Step 520 provides that the fabrication of the wafer is initiated. Thismay include the performance of processes, such as lithography oretching. Subsequent to deposition of the first layer of metal (oftenmetal-one) electrical conductivity is established to allow for teststructures to be stimulated and tested.

In step 530, select test structures may be activated at a particularfabrication. Thus, it is possible to distribute the test structures tobe selectively activated at different fabrication steps. In this way,the test structures can be used to analyze certain processes prior tocompletion of fabrication, and prior to repetition of certain steps,sequences or processes. Thus, if, for example, the first metaldeposition produces a flaw that impacts some die on the wafer, some teststructures may be activated in order to determine that a problem existswith the first metal layer, but not the second.

In step 540, the electrical activity of the activated test structuresare detected and interpreted. In one embodiment, the electrical activitycorresponds to performance parameters such as switching characteristicsof individual gates or structure as a whole (e.g. timing delays, slewrate, or circuit timing). Particular transistors and gates may beobserved, or an output of the structure as a whole may be detected ormeasured.

Step 550 provides that information for evaluating one or more steps orprocesses in the fabrication of the wafer is obtained from theelectrical activity of the test structures. The evaluation informationmay be in various forms. For example, the information may bestatistical, and formulated over a duration that includes thefabrication of several wafers. Alternatively, the information may be forimmediate use. For example, in the event output from a particular teststructure is outside the acceptable range, the fabrication can bestopped, or adjusted for subsequent wafers. In any case, the evaluationinformation may be used at some point to make adjustments andmodifications to a particular fabrication process, step or sequence.

According to embodiment described herein, test structures are formedfrom electrically active switching structures and other devices. Thetest structures may exhibit electrical activity under certainconditions, and measurements of the electrical activity may becorrelated to information about the chip, die or wafer. In particular,the electrical activity may be measured and used based on a principalthat a variance of the measurement of the aforementioned electricallyactive switching structures is related to the variance of discreteprocess components through the design of the switching elements.Electrical activity may be measured as an output 422 to the aggregatePSTS, or may be measured node-to-node for each element of the PSTS.

In one example, test structures may be developed that exaggerate theeffects of gate length, but minimize the effects of other fabricationsteps. In this example of gate length variance, where delay increases asgate Length increases, equation (2) simplifies to,ΔP≈∂F/∂L·ΔL  (3)and the variance that is measured from this switching circuit ΔP will beproportional to the process variance associated with gate length, ΔL.

FIG. 6 illustrates a more detailed method for how PSTS can be developedand used, under an embodiment of the invention. For a given type offabrication (such as MOS, CMOS, Bipolar, BiCMOS, etc. . . . ), step 610provides that a simple building block circuit element is selected and/ordesigned. FIG. 7A is a diagram illustrating aspects of a suitablebuilding block circuit element for CMOS technology indicating channelwidth (W) and length (L). A simple element can also be defined for otherfabrication processes as will be known to those skilled in the art. Theaspects may include: (i) one or more gates 702 (made from n-type andp-type transistors for CMOS, that can be manipulated in dimension (e.g.width or length), (ii) associated series resistance (R) 706 andcapacitance (C) 708, (iii) adjustable load, or fan-out, of the buildingblock 709, which can be seen as inputs from or to the next element inthe measurement chain. One suitable type of building block circuit is aCMOS inverter chain, as illustrated with FIG. 7B, which illustrates useof CMOS inverters in a basic building block circuit.

FIG. 7B illustrates a PSTS composed of identical building blocks thatcan be formed on an active portion of a die with their associatedpower/stimuli and output pads and configured for purpose of makingtime-delay measurements that are sensitive to attributes and results offabrication steps. The PSTS may include a circuit element 710 having aseries of two or more serially connected inverters 712 which in animplementation shown by FIG. 7B, are CMOS switching elements. In anembodiment, each of the inverters 712 includes a pair of complimentaryCMOS transistors. Specifically, each inverter 712 includes a p-channeltype transistor (PMOS) 722 and an n-channel type transistor (NMOS) 724.In each inverter 712, the NMOS transistor 724 and PMOS transistor 722have their respective gates connected together as input, and drainsconnected together as output. The source of the PMOS transistors 722 isconnected to a positive supply voltage and the source of the NMOS 724 tothe negative supply voltage. The substrate of the PMOS transistor 722 isbiased positively (typically at the positive supply voltage), whilesubstrate contact of the NMOS transistor 724 is negatively biased(typically at the negative supply voltage). Techniques are possiblewhere circuitry may be operated with less supply voltage (see e.g. U.S.Pat. No. 5,936,477 teaching of Forward Biased Source-Tab Junction forlow supply voltage).

A circuit element as shown in FIG. 7B is an example of a structure thatcan be manipulated to exhibit electrical activity that relates to anattribute of a fabrication step or sequence of the wafer on which it wasformed. Furthermore, a serial inverter can be configured or incorporatedinto a larger structure to create process-sensitive structures. Suchstructures can provide an output that is indicative of a performanceparameter. In an embodiment such as shown, the performance parameter maybe a time delay between the input and the output of the structure, orsome other indicating of a switching speed of transistors in thatstructure. If, for example, the transistors 722, 724 of some of theinverters 712 in that structure are physically altered to have theirswitching speeds affected by a fabrication step or sequence, then thestructure can be placed at different locations and/or in differentswitching environments so that a difference in the time delay of twosuch structures is indicative of a process variation in the fabricationof the wafer.

In an embodiment, the PSTS may include three basic stages: an inputbuffer 711, a test stage 713 and an output buffer 715 The test stage 713includes the circuit element that can be manipulated. The input buffer711 and output buffer 715 controls the power input so as to control therate at which the transistors of the test stage 713 turn on. Once poweris delivered to the test structure, the transistors of the test stage713 exhibit by design baseline and exaggerated characteristics relatedto a result of the fabrication step or sequence that they are measuring.In an embodiment, both the input and output buffers 711, 715 are commonto all the test structures described below.

In step 615, an attribute of a fabrication step or sequence is selected.The attribute may be correlated to a particular performance parameter,where the performance parameter is measurable form electrical activityof the test structure.

Step 620 provides that a class of one or more test circuit blocks areformed, where test circuit blocks in at least some of the classes aredesigned to provide a performance parameter value that is exaggerated asto how it relates to the presence of the selected fabrication step orsequence. In particular, a variance in the measurements of theperformance parameters of each test circuit blocks in a particular classis indicative of a variation in the corresponding fabrication-relatedattribute. In one embodiment, the variance in the measurements of theperformance parameters of each test circuit block in the class iscompared to a similar variance in the same measurements from a class ofbaseline structures (see step 635). Choosing the physical design of theindividual blocks so that the maximum sensitivity of the switchingcircuit corresponds to the specific process parameter may be performedat this step. A device-circuit analysis program like the differentversions of Spice or Spectre or even numerical simulation methods may beemployed to accomplish this.

Step 625 provides that switching elements in the different classes oftest blocks are placed within a measurement topography to make theswitching elements amenable to test during wafer processing. Examples ofhow the measurement topography may be employed include delay-basedmeasurements for both frequency and phase shift. In FIG. 7C, one or moredelay-sensitive elements 731 is placed between or embedded in a seriesof inverters 734, and subject to control 730, or triggering, theninterconnected back onto itself via a feedback 740 to create a RingOscillator (RO). In FIG. 7D the addition of a reference output 750 toindicate phase shift results in a phase based inverter circuit. Thedelay-sensitive element 731 may correspond to a structure that can bemanipulated, as described with FIG. 7A. A completed test structure maycomprise a test block placed in measurement topography. The types offabrication-related attribute that can be evaluated through measurementsof the respective performance parameters (such as delay-basedmeasurements) include L_(eff), interconnect resistance and capacitance,gate capacitance, leakage and other performance parameters. In oneembodiment, separate PSTS' designed for different exaggeratedsensitivities at the same location or the same PSTS with one specificsensitivity, or combinations of the two aforementioned scenarios couldbe dispersed through out the die or wafer and designed with distinctoutput “signatures” (e.g. frequency, or phase shift) per their locationor sensitivity type or both, and thereby be detected concurrently andsimultaneously but separately. In this embodiment a probe card includingdetectors and stimuli matched to the predetermined locations on thewafer could be utilized to probe die on the wafer simultaneously andconcurrently and increase throughput.

A class of test structures for both individual fabrication attributesand a baseline may be constructed. The process of establishing a PSTS orgroups of PSTS's for each process step or steps is repeated until alldesired process steps are covered.

In step 635, a baseline class of structures is formed. In oneembodiment, the baseline class is constructed from the same blocks asone or more of the classes of test structures. These baseline structuresare designed to either be insensitive to the exaggerated process stepsensitivity of the PSTS's, or are designed such that when co-locatedwith the PSTS's with exaggerated sensitivity the difference of the twostructures' result has an exaggerated sensitivity to the process step.While the baseline class of structures is not necessary, the use of suchtest structures may have benefit.

Step 640 provides that each class of PSTS, including the baseline PSTS,are distributed inside a die. In step 645, measurement of electricalactivity is taken from each test structure. As shown with FIGS. 7C and7D, examples of electrical activity include device performancemeasurements (e.g. frequency and phase delays) that indicate theresponse of process sensitive structure. The electrical activity mayinclude how each PSTS handles and outputs a test signal, as well as howindividual elements of the PSTS perform (e.g. timing and slew-rates andshape of individual gates switches). Types of electrical activity may,as mentioned elsewhere in this application, include electrical activityoutput signals and photonic signals. Optoelectronic signals can bedetected and resolved from photonic signals generated by the teststructures. Additionally, structures can be designed such the electricalactivity produces electromagnetic and or optoelectronic signals to adetection pad 1130. Additionally, structures can be designed that allowfor electron-beam and ion-beam techniques to detect electrical activitypresent at the detection pad 1130.

In step 650, variations in measurements taken in step 645 are analyzed.The analysis may be among a PSTS in a particular class, or betweenclasses (individually or in group) of PSTS, or as compared to oneanother, or “simple” speed measurements of non-PSTS devices, ornon-sensitive structures. In particular, each class of PSTS may becompared to the baseline class of PSTS in order to determine whethervariations in that particular class or beyond a designated variation inrelation to a baseline variation measurement.

FIG. 8 is a representative example of how a method such as describedwith FIG. 6 may be performed. FIG. 8 illustrates a collection of PSTSdistributed at various locations 812 of a die active area 810(surrounded by scribe), including the nominal or baseline PSTS (anoutput of which is represented by numeral 802), which are physicallyco-located with and in the immediate vicinity of one another and thepower, signal and detection circuitry and pads. It is assumed that thebaseline PSTS includes switching elements that are similar to theswitching elements of the design building blocks for one or more of theclass of PSTS. With reference to FIG. 8, the collection of PSTS mayinclude different classes of PSTS, where each PSTS class is sensitive toone or a group of process parameters. The total set of structures willexperience identical process variation due to the proximity of theirplacement at each location that will be dominated by local patterndensity variations and/or other local processing conditions. Duringprocessing, measurement of the control structure will establish theimpact of local process variation on that structure, and can be used asa normalized and calibrated data-point against which the other processand/or location sensitive measurements and their respective measuredvariances will be compared to and calculated as an indicator of. Inturn, the variation will manifest itself in the corresponding PSTSadjacent with the control structure. Local process variation results inchanges to the physical dimensions of switching circuit devices, or tothe devices doping, or both. In turn, these variations impact themeasured performance-related parameter (e.g. frequency or phaseresponse) of the PSTS. In one embodiment, electrical measurementcomparison of the baseline structure to the other structures willcontribute to isolation of one fabrication characteristic that is mostrelated to the process variation, since only the switching circuitsensitive to the process variation will show significant variation inits performance parameter. This can allow a set of measurements todistinguish, say, between the gate-module issues (L_(eff)) andinterconnect dishing resulting in variations from the baseline “norm” ininterconnect resistance. Previous techniques sought to place differenttest structures in physical proximity to portions of chip designs tosimulate local process loading. In contrast here, test structures,adjoining structures for power generation and conditioning, and signaldetection are placed adjacent to one another and are co-located insidethe chip active area and in the vicinity of areas of pattern densityfluctuation.

FIG. 9A illustrates a test stage circuit element 920 that can be formedon the active portion of a die with their associated buffers,power/stimuli and output pads and circuitry, and configured for thepurpose of producing time-delay or phase shift measurements with respectto the baseline circuit or with respect to each other to exaggerate theinfluence of p-doped or n-doped gate length (L_(p), L_(n) respectively)910, 912 on the overall response of the circuit 920. This can beaccomplished by modifying the switching element, series resistance (R),and series capacitance (C) according to the principles illustrated byFIG. 7A, and furthermore, by purposely designing L_(p) and L_(n) at theminimum allowable, near-minimum or sub-minimum gate length while keepingthe p-doped and n-doped gate Widths (W_(p), W_(n) respectively) atlarger values. For the same amount of dimensional variance arising fromlocal pattern density induced variations, ΔL=ΔW, therefore, the variancewill be a larger portion of the overall gate lengths than that for thegate widths, or ΔL/L>ΔW/W. In turn, the measured variance in thefrequency or phase of these devices will be highly sensitive to gatelength. Identical interconnected elements 920 are nested within eitherelectrically active or passive elements 924 to replicate (mimic) localcircuit design pattern density. As those skilled in the art willrecognize, individual n-device or p-device sensitivity to channel lengthcan be achieved by either an L_(p) or L_(n) that is designed toexaggerate the influence of L_(eff) on circuit speed performance.

FIG. 9B illustrates a test stage circuit element 930 that can be formedon the active portion of a die with their associated buffers,power/stimuli and output pads and circuitry, and configured for thepurpose of making time-delay or phase shift measurements to exaggeratethe influence of interconnect resistance on the overall response of thecircuit. This can be accomplished by purposely modifying a length ofinterconnect 934 such that dimensional variance arising from localpattern density induced variations or thickness variations will impactthe measured variance in the frequency or phase of these devices. Theinterconnect is modified such that it's width is kept at minimumdimensions and its length is chosen to create a series resistance largeenough to distinguish time delay of the aggregate structure 930 fromthose of adjacent inverters in FIG. 9B, and such that local variationsin thickness and width will have a greater impact on the delay ofelement 930 than the adjacent elements in FIG. 9B. The comb tinefeatures 936 adjacent to, but not electrically connected withinterconnect 934 will ensure that the PSTS does not change and impactthe pattern density in its vicinity. The aforementioned device can beplaced at one or multiple interconnect levels to isolate the impact tointerconnect resistance from different interconnect levels.

FIG. 9C illustrates a circuit element 940 that can be formed with itsassociated buffers, power and detection elements and circuitry, on theactive portion of a die and configured for the purpose of makingtime-delay or phase shift to exaggerate the influence of interconnectcapacitance on the overall performance response of the circuit. This canbe accomplished by purposely modifying a length of interconnect 944 suchthat the RC contribution to the delay of the aggregate circuit element940 is distinguishable from adjacent elements in FIG. 9C, and such thatline to line dimensional variance arising from local pattern densityinduced variations or film thickness variations will have greater impactto the measured variance in the frequency or phase output of element 940than other elements in FIG. 9C. Additional features 946 adjacent to, butnot electrically connected with interconnect 946 will ensure that thePSTS does not change the pattern density in its vicinity. Theaforementioned device can be placed at one or multiple interconnectlevels to isolate the impact of separate levels of interconnectcapacitance from different interconnect levels.

The complement of measurements from the devices illustrated in FIGS. 9A,9B, and 9C will describe the overall and individual physical variancesignatures providing vital information for the control of interconnectprocessing for the adjacent devices critical for the timing distributionwithin a chip, for clock skew, and any additional performance impact ofthe interconnect structures.

FIG. 9D illustrates circuit elements 950, 960 and 970 that can be formedon the active portion of a die with their associated buffers,power/stimuli and output pads and circuitry, and configured for thepurpose of inducing time-delay or phase shift measurements to exaggeratethe influence of gate capacitance on the overall timing response of thecircuit. This can be accomplished by purposely modifying the areas (L×W)952, 954 and 956 of the gates of groups of devices in known areaincrements. Each increment will impact the measured variance in thefrequency or phase of these devices with different area to perimetervalues owing to either gate film stack variance (area) vs. gateperimeter area (source-drain implant and photo/etch). Additional devicessimilar to circuit element 920 that are adjacent to, but notelectrically connected with the device in FIG. 9D, as taught in FIGS.9A, 9B, and 9C, will ensure that the PSTS pattern density is similar tothe device density for active devices in its vicinity.

FIG. 9E illustrates a circuit element 980 and 990 that can be formed onthe active portion of a die with their associated buffers, power/stimuliand output pads and circuitry, and configured for the purpose of makingtime-delay or phase shift measurements to exaggerate the influence ofgate capacitance on the overall response of the circuit, also. Thenumber of devices in 982 and 984 are chosen such that the devices haveequivalent performance to circuit elements 960 and 970, respectively.Comparison of the frequency or phase delay results between the devicesin FIGS. 9D and 9E will separate the perimeter effect of etch (FIG. 9E)vs. source-drain extension (FIG. 9D) capacitance. Additional devicessimilar to circuit element 920 and adjacent to, but not electricallyconnected with the device in FIG. 9B, as taught in FIGS. 9A, 9B, and 9C,will ensure that the PSTS pattern density is similar to the devicedensity for active devices in its vicinity. Sources of variance forthese devices may also include the presence of impurities in the gatedielectric material, gate electrode doping segregation, etc.

FIG. 10 illustrates a PSTS that can be formed on the active portion of adie with their associated buffers, power/stimuli and output pads andcircuitry, and configured for the purpose of making time-delay or phaseshift measurements to exaggerate and correlate the offset betweencritical dimension scanning electron microscope (CD-SEM measurements)and electrical critical dimension (CD) measurements. CD-SEM measurementsare typically correlated to electrically active devices in the scribeline in order to ensure that a “good” process window for CD's—that isCD's meeting the electrical process specification—is determined duringprocess development. Since CD-SEMs are not sensitive to the electricalimpact of source drain extension implants, or to channel dopingproperties, such a correlation is performed routinely to make certainthat the electrical CD equivalent of the measured physical CD is withinspecification. A structure such as shown may measure signal delaybetween switching circuit elements, and a CD SEM can measure CDvariations for the isolated and dense structures in the vicinity of thetiming structures. Data from both are used to determine lithography andetch process windows. In FIG. 10, an isolated area 1010 and a denselypacked area 1050 of devices are created. A repeating circuit element1030 is designed such that the gate length 1042 of the element 1040 isidentical in geometry to an isolated line 1020. Similarly, dense line1060 and the gate length 1082 of devices 1080 in a densely packed areaare identically designed. Electrical measurement of isolated areas 1010and dense areas 1050, and CD-SEM measurement of isolated line 1020 andgate length 1042, as well as dense line 1060 and gate length 1082, serveto establish a physical gate length (L) to electrical gate length(L_(eff)) correlation. When the measured frequency variation or phasevariation is compared to the CD SEM result an offset can be directlyestablished.

According to another embodiment, an inverter chain (see e.g., FIG. 7B)is provided as part of a test structure in order to measure the speedwith which the n-channel and p-channel devices switch, and the totaldelay associated of the entire chain when the chain is powered andstimulated at clock speeds of the native design of the product process.Placement and measurement of these structures and their associatedpower/stimuli and data collection circuits and pads within the activearea chip area (see FIG. 8) would therefore allow the assessment ofin-chip variation from these structures. The placement of thesestructures in the active areas of the chip may also provide for a simpleyield screen at the first level of metallization to segregate the waferswhich fall outside of the desired performance specification (e.g.slower) than desired wafers from continuing the manufacturing process.

In another embodiment, the simple inverter chain (similar to FIG. 7B) ofthe test structure can be designed such that several elements in thechain have a designed-in flaw that is sensitive to process fluctuation.For example, an additional serif can be added to the gate strap areasuch that it is more likely to “scum”, impairing proper etching of thefeature and resulting in a hairline short between the gate strap and anadjacent metal strap. Placement and measurement of these structureswithin the active area of the die (chip) and staging fixed lithographicdefocus steps through and past known optimal focus, would thereforeallow the assessment of in-chip variation that is prone to shorting andwould allow for readjustment and the rectification of the lithographyoptimal focus setting and offset process etching variables commensuratewith the sensitivity to “scum” due to local pattern variation.

Still further, another embodiment provides that the simple inverterchain of the test structure is structured so that the circuit speed canbe segregated between device process missteps versus interconnectprocessing. These circuits would be designed to add a fixed amount ofinterconnect capacitance representative of typical distribution lengths.Measurement at metal-one deposition can provide in-chip variationmeasurements of circuit speed. Since the inventive techniques disclosedhere are non-contact, noninvasive and require only line-of-sight toactualize the measurement, subsequent measurements of the same structureat metal-two or metal-three depositions, or at any metal level up to andincluding metal-final, will allow the segregation of in-chip variationscaused by interconnect RC delay arising after metal one, from any of anumber of process and/or design issues at Metal 2, Metal 2, etc. . . .Among other advantages, such a design focuses yield engineeringresources on the metal interconnect sequence that is not within expectedmeasurement tolerances. Once the metal interconnect process isrectified, similar measurements can validate the efficacy of the process“fix”.

In another example, circuit subsets from advanced customer designs canbe added to an existing mature chip. Placement and measurement of thesestructures within the active area of the chip area would therefore allowthe assessment of in-chip variation of these new circuits in thepresence of local pattern variation. Placement of such structures mayalso provide for a quick yield screen at the first level ofmetallization to segregate slower and faster than desired circuits,resulting in quick feedback for the designers to further optimize theircircuits prior to committing the design to large manufacturing volume.

Embodiments of the invention contemplate various other circuit designsfor use as test structures. Among other advantages, embodimentsdescribed herein can readily accommodate known n-channel and p-channeldevices made today, as well as more complex devices being considered infuture manufacturing processes.

The aforesaid specialized test structures may be designed using variouscomputer-based circuit and physical design and analysis tools well knownto persons of skill in the art. One example of such a design tool is“PROPHET” developed by Center for Integrated Systems, StanfordUniversity, Calif. Because PROPHET and similar design tools are capableof predicting circuit characteristics for different values of processparameters, the design of the structure may be optimized to providesensitivity to only select process parameters and not the others.

The placement of test structures and their associated power/stimuli anddetection circuitry and pads on a wafer or chip according to FIG. 8 maybe one of a design choice. According to one embodiment, such structuresare placed along principle diagonal inside the product chip.Alternatively, the structures may be placed along a domino pattern,including, for example, top left, top right, center, bottom left andbottom right areas of the chip. Alternatively, for example inmicroprocessors (MPU), central processors (CPU) units and ASIC devices,the structures may be placed near the perimeter and internal to corelogic, or SRAM blocks, etc. It should be noted that the exact locationof the test structures on the chip is not essential to the presentinvention. Other suitable location choices are possible, includingunused portions of the wafer, dedicated test chips, scribe, and on testwafers.

Intra-Chip Power and Signal Generation for Test Structures

There are numerous ways to use test structures for purpose of evaluatingfabrication. In order to utilize test structures prior to completion offabrication, it is advantageous to overcome certain challenges. Amongthese challenges, the test structures may need to be activated prior tothe integrated circuits on the remainder of the chip being fully formed.Furthermore, it is desirable to test as many chips on a wafer aspossible, while not destroying or damaging those chips.

Embodiments described herein provide test structures within on a wafer.The test structures are provided power and test signals from co-locatedstructures in the die active area or the scribe in order to evaluatefabrication of the wafer. For one of the objectives of the invention,in-die stimulation of signals to the test structures, the required powerand test/trigger signals are provided to the chip in a non-destructive,non-contact and non-invasive manner. Furthermore, the test structurescan be activated at any point after the deposition of conductivematerial (e.g. after local interconnect or metal-one) on the wafer.Accordingly, one embodiment provides that the test structures arescattered throughout numerous (if not all) chips that are on the wafer(including scribe and unused areas of the wafer or test chips) and thatthe test structures can be triggered, stimulated or otherwise activatedat the different stages of the fabrication (in-line). Each teststructure may be used repeatedly, without affecting subsequent usabilityof the chip, and without disrupting the process flow of the fabrication.Valuable information regarding how the fabrication can be controlledand/or improved may be determined from using and testing the teststructures in this manner, especially in the active area of thechip/die. This information may be region specific on the wafer (e.g.corners of the wafer), die or chip specific, or wafer-level, as it mayapply to a plurality of the chips that are formed on the same wafer, andmay further be compared from wafer to wafer and lot to lot. Furthermore,as previously described with other embodiments, the test structures maybe specialized to provide information about a process variation and/orone or more fabrication steps of the wafer.

FIG. 11 is a representative block diagram illustrating a scheme topopulate regions of a partially fabricated wafer die, includingintra-die regions, with test structures that can then be used to measureperformance parameters correlated with process steps or process stepsequences of the fabrication, or for performance related (e.g. speed)monitoring of the same area within the die(s) or the wafer (s). The teststructures may be used within one or more fabrication steps to evaluatethe fabrication of the wafer. In an embodiment such as illustrated inFIG. 11, test structures 1120, power receiver 1112, test/triggerreceiver 1110 and detection pads 1130 can be co-located in a chip 1102,and may be tested repeatedly and non-destructively. Furthermore, thechip 1102 may be tested in either a completely or partially completedfabrication state. For example, according to an embodiment such asdescribed with FIG. 11, test structures may be activated and testedearly on in the fabrication of the wafer in order to evaluate one ormore initial fabrication processes, then activated later on infabrication to evaluate subsequent fabrication processes. The teststructures may also be stimulated/activated and tested to evaluate anoverall fabrication and/or performance of the chip once fabrication hasbeen completed.

According to an embodiment, chip 1102 is provided a test/triggerreceiver 1110, a power receiver 1112, one or more test structures 1120(possibly of different classes or designs) and corresponding detectionpads 1130. All of these components may be formed on the active area ofthe die in more than one location for intra-die measurements. The powerreceiver 1112 may be stimulated or energized to generate a power signalfor the test structures 1120. In an embodiment, the power receiver canbe made of one or more photodiodes. The combination of the power signaland the test/trigger signal activates the individual test structure. Thetest/trigger receiver 1110 may be stimulated or energized to generate atrigger signal for the test structures 1120. In an embodiment, thetest/trigger receiver can be made of one or more photodiodes with fast,transient response. Both the test/trigger receiver 1110 and the powerreceiver 1112 may be stimulated or energized by an outside energysource. In particular, the test/trigger signal and power signal mayactivate the test structure 1120 into exhibiting a detectable electricalactivity. The electrical activity may include, but not limited to, theemission of hot-electron induced photons (which could be detected fortimed-resolved photon emissions which are time-correlated to switchingevents in active junctions), output of one or more electrical signals,time-correlated change in one or more types of electro-opticalproperties (e.g. charge-induced electro-rectification and/orelectro-absorption), and/or other electrical activity at the junction ofthe interconnect.

In order to not mechanically or electrically destroy, damage, perturb orotherwise affect the usability of the chip 1102 and prevent or disruptfurther steps in the fabrication process flow, an embodiment providesthat the active area co-located test/trigger receiver 1110 and the powerreceiver 1112 are energized through a contact-less and non-invasiveenergy medium. Other embodiments may provide test structures intra-diethat are activated by only a power signal. In either case, theactivation of the test structures is accomplished by co-locating (in thesame active area on the same die) intra-chip energy sources (power/test)with the test structures. In an embodiment shown by FIG. 11, separateenergy and trigger/test sources (e.g. beams) from outside of the wafermay be used to energize test/trigger receiver 1110 and power receiver1112. In one embodiment, a first energy source 1108 may direct aconstant energy beam onto power receiver 1112, so that the resultingpower signal for the test structure 1120 is constant. A second energysource 1106 may direct a time- (and/or amplitude) modulated beam ontotest/trigger receiver 1110. The modulated beam results in a modulatedtest signal to be inputted for the test structure 1120. This subsequentelectrical activity of the test structure 1120 may be based on themodulated input from the test/trigger source 1106. The test/triggerreceiver 1110 may be energized simultaneously or concurrently with thepower receiver 1112. According to one embodiment, first energy source1106 is a laser beam produces a constant source of energy for power,while second energy source is a laser that produced a pulsating (e.g.time-gated) modulating beam.

Alternatively, the same energy source 1108 may be split with one portiongoing to the power receiver 1112 and the other portion can be modulatedand sent to test/trigger receiver 1110.

The electrical activity that results from the test structure 1120 beingtriggered may be measured as a performance parameter, such as switchingspeed, phase or signal delay, or slew rate. In one embodiment, switchingspeed may be measured node-to-node (individual gate-level), such as foran individual transistor, as well as end-to-end on the test structure1120. The test structure 1120 may be specialized so that the performanceparameters can correlate into information about specific fabricationstep(s) or sequence(s), and more specifically, process variations acrossthe chip or die, wafer, or from one wafer to another wafer. Theevaluation information may include direct performance measurement ofdevice speeds useful to forecast final fabrication quality, and/orinformation that isolates process variations caused by certainfabrication steps, including information about the results of specificprocesses and how those processes were performed.

In one embodiment, some of the electrical activity of the triggered teststructure 1120 may be a nodal signal output in the form of anoptoelectronic effect. For example, hot electron emission intrinsic tothe device switching is a probe-less measurement technique that can bedeployed through the use of well-designed photon detector 1142. Inanother example, other optoelectronic effects such as charge inducedelectro-absorption and electro-rectification may require the use of aprobe/detector 1142. In another example, an electron beam probe/detector1142 can be configured to detect node-to-node switching events.

The test/trigger signal may also be used to provide a repetitive “timingedge” for the purposes of time-based measurements which can yieldnode-to-node information, and also as a test vector that could be usedto measure response of the test structure node by node. The signaloutput at each node (and ultimately at the output node/detection pad)may be analyzed to ascertain how the test structure 1120's internalgates, transistors, or other nodes affected the test signal. Thenode-to-node output signals may reflect information from when anindividual transistor switches and changes its state, and also theimpact of the active circuit on how the test signal changes and evolvesin time and shape from node to node. Therefore, the nodal signal outputfrom transistors and other components of the test structure provideinformation on how the test signal is processed at a particulartransistor, gate or other node in the test structure. Since electricalactivity from individual transistors is observed, the information on howthe test signal is processed is said to be “node-to-node”. In thisembodiment the test signal could also be used to supply the timing“edge” required for time-based measurements. Also, for those familiarwith the art, the test vector could be used for complexdiagnostic/design purposes and analysis on the wafer or die in thefabrication process. This is task that is usually performed on packaged(post passivated and fully processed die).

As an alternative to node-to-node detection of electrical activity, anembodiment using a test/trigger vector on the test structures can detectelectrical activity from a test structure in aggregate, meaning theelectrical activity reflects how the power or test signal evolvedbetween input and output ends of the test structure (and not atindividual gates and nodes of the test structure). This electricalactivity may be an aggregate signal output. In order to detect theaggregate signal output from the test structure 1120 in a non-contactand non-destructive manner, detector pad 1130 may be used. The detectorpad 1130 may convert an electrical output signal from test structure1120 into some other electrical activity that can be detected bycontact-less means and medium. As mentioned, the electrical outputsignal reflects how the test signal was processed between input andoutput stages of the test structure.

In an embodiment, the aggregate time-delay of the test structure/circuitcan be manifest in frequency and detector pad 1130 iselectromagnetically (e.g. capacitively or inductively) coupled to asignal based on the electrical signal of the test structure 1120. Areceiver 1140 may be positioned over the detector pad 1130 to detect andmeasure the signal from the pad. For node-to-node detection of teststructure 1120, an appropriate probe/detector 1142 combination may beused to probe/detect the signal from individual gates of the teststructure. For example, a laser probe and optical detector forelectro-rectification or electro-absorption effects; or electron-beamprobe with appropriate time-gated detector; or a time-resolved detectorfor probe-less measurements of hot-electron induced photons.

The information that can be identified from the output signals providesa certain type and/or range for a performance parameter value.Furthermore, the test structure 1120 may be designed so that itsactivity, whether in the time-based node-to-node form, or aggregate(input/output) delay signal, is sensitive to a particular fabricationstep in the fabrication of the wafer. As described elsewhere in thisapplication, the performance parameter values may be analyzed in variousways to evaluate fabrication of the wafer. For example, a variance ofthe performance parameter values may be determined using a common teststructure that is disposed at multiple locations of one die, or acrossmany die and other locations of the wafer. Because the performanceparameter values may depend on test structure design, one embodimentprovides that the performance parameter values identify informationabout specific fabrication steps or sequences, including processvariations.

An embodiment such as described in FIG. 11 may eliminate the use oftrace lines and other mechanical probe devices that reside in the scribeto the chip 1102 for purpose of providing the test and/or power signalsand stimuli. The elimination of such mechanical contacts enables the keyand necessary requirement that individual chips formed from the wafer tobe hermetically sealed when fabrication is completed. According tocurrent chip design, the seal is required for the chip to be insensitiveto moisture and other contaminations from the environment, a requirementfor most (if not all) semiconductor components. Consequently, a schemesuch as shown in FIG. 11 may identify or determine performance values ofvarious types and at numerous locations on the chip 1102 or its wafer,without affecting the usability of the chip 1102. In addition, thescheme allows for the test structure 1120 to be activated and triggeredat every chosen step of the fabrication process. Numerous teststructures of multiple classes may be used. As such, tests may beperformed repeatedly on the chip 1102 at different stages of thefabrication process.

FIG. 12 illustrates a method for using a test structure when the powerand test/trigger signal for that test structure are generated intra-die,according to an embodiment. Reference is made to elements of FIG. 11 inorder to illustrate suitable components or context for implementing amethod as described.

In step 1210, a power signal is induced within the die active area andapplied to the test structures 1120 a particular juncture duringfabrication, or after its completion.

In step 1220, a test/trigger signal is generated within the chip (in theactive area) and applied to one or more test structures 1120. Thetest/trigger signal may be generated by an external, non-contact energysource (e.g. first energy source 1106) that energizes a designatedregion on the chip, and causes that region to generate a test/triggersignal (or equivalent thereof). According to an embodiment, theapplication of the power and the test/trigger signal to the one or moretest structures is what activates the test structures into exhibitingelectrical activity. Step 1210 may be performed concurrently orsimultaneously with step 1210. In particular, the application of thepower and the test/trigger signal may be simultaneous or concurrent. Thepower signal may be generated in the same manner as the test/triggersignal-in that an external, non-contact energy source may energize adesignated region on the chip. With reference to FIG. 11, the designatedregion of chip that is energized corresponds to power receiver 1112. Inone embodiment, a single region on the chip 1102 may be used one or moretimes to distribute power to multiple test structures on that chip,during one or more testing phases.

In step 1230, electrical activity resulting from individual teststructures 1120 being activated is detected. The electrical activity ofthe test structures (which may themselves be sensitive to fabricationsteps) may be in the form of node-to-node output, aggregate signals, andcombinations thereof. Detection of either type of electrical activitymay require use of specifically designed probes (if needed) andassociated detectors, as described elsewhere in this application. In anembodiment for an aggregate (input to output) signal, the addition ofdetection pad 1130 transmits a signal corresponding to the aggregateoutput signal of one or more test structures (including the individualnodes of the test structures). As discussed elsewhere, the aggregateoutput signal may be provided a signature to identify the teststructures that contribute to the aggregate signals.

Step 1240 provides that the detected electrical activity are interpretedas a performance parameter variance relating to a quality metric relatedto yield, or relating a process step or steps in the process sequence.Examples of performance parameters may correspond to any one of thefollowing: (i) a switching speed of the test structure as a whole, orwithin individual gates; (ii) a frequency or phase delay as to how theoutput signal differs from the input signal to the test structure 1120;and (iii) a measurement of a slew rate and shape (in time) for one ormore transistors, or the aggregate signal for the test structure as awhole.

According to an embodiment, step 1250 provides that the variance of theperformance parameters, or the variance to a baseline, are analyzed inorder to correlate them to one or more specific steps, sequence ofsteps, or processes in the fabrication of the wafer. In one embodiment,a variance of the performance parameter values is determined to identifyprocess variations. Other examples of analysis functions includeperforming comparisons between performance parameters as measured byseparate test structures at different locations of the die, or havingdifferent designs. The analysis may also include correlating the valuesof the performance parameters (or variances thereof) to particularfabrication characteristics that are associated with specific processesperformed in the fabrication prior to the test structures beingactivated.

A method such as described may be performed without affecting ordamaging the chip. Both the application of the power and test/triggersignal, as well as the detection of the signals from the test structure,may be done without affecting the need to seal (or passivate) thedie/wafer and it enables reuse all of its components when fabrication ofthe wafer is complete.

Power Generation and Regulation

A test structure such as described with FIG. 11 may have sensitivity tovariations of the input signal. In particular, any fluctuation in theinput power provided to a test structure may amplify or skew an outputof the test structure so as to obscure output variations that areattributable to process variations or fabrication characteristics.Furthermore, since the energy source used to generate the power signalat the receiver collocated with the test structure is external to andoff-chip, the conversion of energy into a power signal may carryinherent instabilities and fluctuations. The result is that an in-chippower signal generated from an off-chip power source may requireappropriate buffering, regulation (e.g. rectification) and/orstabilization.

FIG. 13A illustrates a circuit for regulating an input voltage createdby an external power source that can be co-located in the die activearea with power receivers, test/trigger receivers, test structures anddetection pads. A circuit 1305 includes a photodiode 1304, a regulator1310, an on-chip reference voltage mechanism 1316 for providing areference voltage, and a PSTS 1318 (such as described with FIG. 4). Inan embodiment such as shown, the external power source is a continuouswave (CW) laser 1302 which directs light onto the photodiode 1304 andthe reference voltage circuitry 1316, such as a band-gap voltagereference. In an alternate embodiment, the photodiode 1304 operates in amode to regulate and fix the voltage to the PSTS 1318 in a narrow range.The photodiode 1304 creates a voltage that is regulated and stabilizedby regulator 1310. In an embodiment where the external power source isthe CW laser source 1302, regulator 1310 regulates the voltage for aPSTS 1318 to be within a narrow band or range. In the case where theexternal power source is alternating (e.g. pulse-amplitude, time, gatedmodulated), regulator 1310 may also rectify the input voltage. Theregulator 1310 may include a comparator 1312 that compares a voltagelevel of the input to the PSTS 1318 to a reference voltage provided byband-gap voltage reference 1316. An output of comparator 1316 may feedregulator 1310 to make adjustments to the voltage of the input to thePSTS 1318. In one embodiment, the regulator 1310 includes a voltagemultiplier circuitry, such as a switched capacitor voltage doubler, forregulation including a voltage multiplier for test structures requiringmore voltage than created by the power receivers.

The sensitivity of the PSTS 1318 may require the input voltage to bestable, or in a narrow band of variation. In the case where the voltageprovided from the photodiode 1304 exceeds the upper level of the band,regulator 1310 may reduce the voltage on the input line to the PSTS1318. In the case where the voltage on the input line to PSTS is lessthan a lower limit of the band, the regulator 1310 may switch off orwork in diminished capacity. It may also be possible to boost the inputvoltage to the PSTS 1318. Alternatively, a feedback mechanism may signallaser 1302 to increase the amount of light delivered to photodiode 1304.Examples of how circuit 1305 may be modified to allow for completefeedback (including too little power supply) are provided below.

FIG. 13B illustrates a circuit 1325 for regulating an input voltagecreated by an external power source while enabling feedback to lasersource 1302 that can be co-located in the die active area with powerreceivers, test/trigger receivers, test structures and detection pads.The circuit 1325 may include the photodiode 1304, a reference ringoscillator 1308, PSTS 1318 and a feedback mechanism 1326. In anembodiment, laser 1302 directs light onto photodiode 1304. In actuality,a bank of photodiodes may be used. The ring oscillators 1326 provide afrequency output directly related and varied by the voltage from thephotodiode 1304. Specifically, ring oscillator 1308 acts as a voltagecontrolled oscillator (VCO), the frequency of which is received by thefeedback mechanism 1326. A single or a pair of capacitive pads 1328,1329 combine to convert the oscillating voltage into a feedback signalto modulate the laser 1302 output. When the voltage caused by the laser1302 is higher than the PSTS upper band, the ring oscillator outputfrequency is high and out of the desired range, and the feedback signalto laser 1302 reduces the output of the laser. When the voltage causedby the laser 1302 is lower than the PSTS lower band, the ring oscillatoroutput frequency is too low, and the feedback signal causes laser 1302to increase its power. In this way, the combination of the VCO 1308 andfeedback mechanism 1326 can be used to monitor and control laser 1302 toregulate and increase and decrease power as necessary. Laser controlunit 1332 monitors and controls the laser's timing and power output.Modulator 1331, such as an acousto-optic and/or electro-optic modulator,is used to modulate the timing and amplitude output of the laser, andmay be used for noise suppression also.

FIG. 13C illustrates a circuit 1345 for regulating an input voltagecreated by an external power source while enabling feedback to lasersource 1302 that can be co-located in the die active area with powerreceivers, test/trigger receivers, test structures and detection pads.The circuit 1345 may require fairly (relative to the power requirementsfor the test structure and the output buffer circuitry and drive for thepads) low levels of power. Circuit 1345 includes photodiode 1304, avoltage multiplier 1342, feedback mechanism 1326, PSTS 1318, and aregulator 1350. In an embodiment, the voltage multiplier is made usingswitched capacitor charge pumps. The regulator 1350 may include band-gapvoltage reference 1352, comparator 1354, pulse-width modulator 1356, anda shunt regulator 1358, such as voltage buck circuits. In an embodiment,the output of the laser 1302 in FIGS. 13B, and 13C, can be driven by alaser power controller to modulate its amplitude and/or gating(pulsed-mode) function. Application of light from laser 1302 mayinitiate a fairly small voltage level from photodiode 1304. The voltagemultiplier 1342 may multiply the voltage of photodiode 1304 so that theinput voltage is more in the range of the upper and lower voltage limitsfor the PSTS 1318 to work properly. That is variations in its outputsignal are caused by process-specific variations and not induced byinput signal voltage variations. The comparator 1354 may compare thevoltage on the line with the reference voltage of the band-gap voltagereference 1352. If the reference voltage is exceeded, voltage buckcircuits 1358 are triggered to drain current. This may correspond tothreshold levels of each circuit's transistor being exceeded, therebycausing the respective transistor to switch at different (unaccepted)levels and times. Each voltage buck circuit 1358 may drain only afraction of the total voltage drained. When the voltage buck circuits1358 are switched, voltage is supplied to the pulse-width modulator1358. The pulse-width modulator 1356 modulates the excess voltage. Themodulated excess voltage is provided to feedback mechanism 1326. Asdescribed in FIG. 13B, this modulated voltage signal is used to increaseor decrease laser 1302. In the event there is too much voltage createdby laser 1302, the modulated voltage causes the laser 1302 to decreasepower. In an embodiment, when the laser 1302 fails to provide sufficientpower, the pulsed-width modulator 1356 becomes quiet. The act ofbecoming quiet is an input to the laser 1302 to increase its power. Whenthe laser 1302 sufficiently increases the voltage provided fromphotodiode 1304, the pulsed-width modulator 1356 may start up again.Laser control unit 1332 monitors and controls the laser's timing andpower output. Modulator 1331, such as an acousto-optic and/orelectro-optic modulator, is used to modulate the timing and amplitudeoutput of the laser, and may be used for noise suppression also.

An embodiment such as shown in FIG. 13C has several benefits. Amongthem, a relatively low amount of power is consumed in buffering theinput voltage for the PSTS 1318. Furthermore, the feedback to the laser1302 directs the laser to either increase or decrease power as neededfor stability and repeatability across one or more test structuresdistributed on one or more die, scribe regions or other locations of thewafer.

Various techniques may be used to generate and regulate power within thechip, so as to be able to operate test structures on the chip withoutdetrimentally affecting a usability of the chip. According to anembodiment such as described with FIGS. 13A, 13B and 13C, on-chip powergeneration is accomplished through use of a laser beam that provides alaser source to stimulate or energize an energy receiving pad 1304. A CWpower signal may result. Some or all of the test structures on the chipmay use the power signal. In one embodiment, application of the powersignal is concurrent or simultaneous with application of another energybeam for the test/trigger signal. The power signal for some or all teststructures on a chip may be generated through the energized power pad.

Alternative Power Generation

As described in embodiments of FIGS. 13A-13C, and with embodimentsdescribed elsewhere in this application, one source of off-chip powerfor causing the in-chip generation of the power signal (and possibly thetest signal) is a laser that directs an energy beam onto a photodiode orother receiving element. However, alternative power generationmechanisms may also be used.

FIGS. 14A and 14B illustrate an embodiment in which a thermo-electric(or reverse thermo-electric a.k.a. Seebeck effect) mechanism is coupledwith a laser or other energy source in order to cause in-chip generationof a power or test signal that can be co-located in the die active areawith test/trigger receivers, test structures and detection pads. FIG.14A is a top view of a p-n (doped) structure that is modified toseparate its “p” region 1402 from the “n” region 1410. FIG. 14B is thecorresponding cross-sectional view along lines A-A. For CMOS, an n-well1404 that is electrically addressable through contact pad 1430 is addedto isolate the p-well 1402 from the substrate 1406. A resulting gap 1414(FIG. 14B) is created. A conductive plate 1450, such as may be formed bymetal interconnects the “p” region 1402 with the “n” region 1404, and isplaced over the “p” region 1402, “n” region 1404, and gap 1405 to savespace.

A laser or other energy applying source may be used to heat the pad1450. The heat excited carries in the respective “p” and “n” regions1402, 1410. The result is that heat migrates away from or to the “p” and“n” regions 1402, 1410 respectively, that in turn, generates a movementof charge in the opposite direction to contacts 1440 and 1442respectively. Since the majority carriers are of opposite sign for the“p” and “n” regions, the charges add constructively to form an aggregatevoltage across pads 1440 and 1442. A feedback or modulating circuit canbe used to regulate the power for stability and repeatability purposes.

Other power generation mechanisms may be used. For example, an inductivepower generation mechanism positions in an inductive element in the die.Another inductive component is moved over the inductive element in orderto generate a current in the die from the inductive element. A feedbackor modulating circuit can be used to regulate the power for stabilityand repeatability purposes.

Other power generating mechanisms may be used. Examples of suchmechanisms include use of RF signals to generate a current or voltage.For example, an RF signal may be applied to a resistive element to causea voltage differential. Alternatively, a capacitive coupling may be usedto generate sufficient energy to create one or both of the power andtest signal. A feedback or modulating circuit can be used to regulatethe power for stability and repeatability purposes.

In another embodiment, a first energy source 1108 may direct a modulatedenergy beam onto power receiver and modulator 1112, so that theresulting power signal for the test structure 1120 is modulated, albeitwith a very slow period when compared with test structure speed, and hasactively controlled stability and constancy of power delivered andreceived through the use of appropriately designed receiver 1112 and itsassociated circuitry for feedback and modulation of the energy source.

Apparatus for Non-Contact Detection and Measurement of ElectricalActivity in Semiconductor Devices and Circuits

FIG. 15 illustrates an electromechanically non-contact and non-invasivesystem 1500 for stimulating, detecting and measuring electrical activityfrom designated locations on a wafer. The designated locations maycorrespond to locations of specialized test structures or other elementsthat are capable of exhibiting electrical activity that can forecastchip fabrication quality and yield, and/or be correlated to howfabrication steps, sequences or processes were performed. In particular,the system 1500 may be used to interpret electrical activity detectedfrom specialized test structures placed throughout the wafer (includingintra-die) co-located with power and detection circuitry, of parametersand their variations that directly relate to and impact circuitperformance and can thereby forecast final and performance yield or becorrelated to the impact of fabrication steps or sequences during thefabrication of the devices and integrated circuits and elements on thewafer. An embodiment contemplates that system 1500 detects and measureselectrical activities of the specialized test structures, co-locatedpower and detection circuitry, distributed throughout the wafer,including inside the active regions of die and in the scribe regions (asillustrated in FIG. 1B). The test structures may exhibit electricalactivity that exaggerates the presence (or absence) of attributes andresults of fabrication steps or sequences. Examples of how such teststructures may be implemented are described with FIGS. 4-10. Anembodiment described with FIG. 15 may be configured to (i) activate thetest structures, and (ii) detect electrical activity from the activatedtest structures, in a manner consistent with embodiment of FIGS. 11 and12, such that all elements are co-located inside the active area of adie and do not require physical wiring and related contacts from theactive areas to non-active areas of the die or to the scribe, or otherportions of the wafer outside the die and its active area.

According to one implementation, first energy source 1510 generates anenergy beam 1516 for receiver 1512. The first energy beam 1516 maycomprise optical radiation having a wavelength λ₁. The first receiver1512 may correspond to a photoreceiver (e.g. a photodiode) disposed on asurface of the die 1550. In one embodiment, the first receiver 1512 is aphotodiode or similar device. The first energy source 1510 may be adevice such as a continuous wave CW power laser (e.g. a laser diode orgas or solid-state laser) or other similar device with appropriatewavelength to ensure high efficiency coupling and absorption andcontainment within the photodiode structure. When implemented, thewavelength spectrum of the electromagnetic radiation emitted by thefirst energy source 1510 may overlap within the sensitivity region ofthe first receiver 1512. This energizes first receiver 1512 to produceand convert the electromagnetic energy to electrical power 1518. In oneembodiment, for the case where first energy beam 1516 is anelectromagnetic wave, receiver 1512 may correspond to an electromagneticpower receiver similar to the structure of a transformer.

According to one embodiment, a second receiver 1522, test/triggersignal, is arranged inside the die 1550 so as to be appropriatelycoupled with the second energy source 1520. The second receiver 1522 mayalso be a photodiode or a similar electro-optical device, or a metalline or dielectric for e-beam or ion-beam energy sources and beams,respectively. The second energy source 1520 may be a modulated powersource, providing a modulated beam 1526. For example, the second energysource 1520 may be a time and/or amplitude modulated pulsed laser. Themodulated beam 1526 may have a wavelength λ₂, which may be differentfrom the wavelength λ₁ of the energy beam 1516. The second receiver 1522is energized by the modulated beam 1526 to generate an alternating ormodulating test/trigger signal 1528.

The power signal 1518 may be conditioned by a power conditioner 1519prior to the signal being received by test structure 1530. A signalconditioner 1529 may also condition the test/trigger signal 1528 beforebeing received by the test structure 1530. These conditioning, controland buffer circuits, similar to their associated receivers, areco-located in the active intra-die area with the test structures. Inanother embodiment, as described in FIGS. 13B and 13C, pre- andpost-control and conditioning of the energy and timing sources beforethe silicon/device can be achieved to further regulate the stability ofthe signals at the test structures. After the power signal 1518 and thetest/trigger signal 1528 activate the test structure 1530, an output1538 from test structure is sent to detector pad 1540. The detector pad1540 may include a signal receiver mechanism for receiving the output1538. In one embodiment, detector pad 1540 transmits the output as anelectromagnetic RF signal 1555, which could then be detected by anappropriate coupling non-contact electromagnetic RF detector 1574. Oneembodiment provides that the signal receiver mechanism of the detectorpad to electromagnetically tag the output 1538 with an unique identifierbefore converting that signal into an RF transmission that can bedetected by an RF detector 1574. In this way, the RF signal 1555 mayhave an electromagnetic signature associated with it that is particularand unique to each test structure 1530. The signatures uniquely enablethe identification of each test structures electrical activitydistributed on the wafer for identification, to pinpoint and distinguishby its associated signature. This can enable concurrent and simultaneousstimulation and detection of test structures on one or more one dieand/or throughout the wafer.

As an alternative to an electromagnetic detection with an RF pad 1540and RF detector 1574, a probe and detector configuration can be used todetect changes in the electrical potential at detector pad 1540 in amulti-beam configuration. In one embodiment, the third beam 1557, whichmay be in the form of an electron beam, can be incident and containedwithin detector pad 1540, such as a metal pad, to detect a voltagepotential. The detected secondary electron emission collected atdetector 1573 from pad 1540 will change as the surface potential of thepad is modulated by the electrical activity of test structure 1530. Themodulated surface potential will modulate the secondary electronemission flux giving rise to voltage contrast changes of the collectedthird beam 1557, and will be detected by the detector 1573. The secondbeam 1516 used to create a test/trigger signal 1518 can also be used toimprove the signal to noise of the third beam 1557 (which may be asecondary electron-beam).

In another embodiment, the third beam 1557 can be an ion beam that isshone on detector pad 1540 made of dielectric on Silicon to establish aknown charge or voltage potential. A capacitive coupling of this chargeon pad 1540 to a probe detector 1573 will modulate coincident with theelectrical activity of test structure 1530. The second ion-beam 1516used to create a test/trigger signal 1518 can be used to improve thesignal to noise of the capacitive coupling.

As an addition or alternative to an electromagnetic detection such asillustrated with RF pad 1540 and RF detector 1574, a single or set ofnode-to-node detectors may be used to detect and measure various formsof electrical activity from individual nodes of the test structure 1530when individual nodes respond to the power signal 1518 and/or the testsignal 1528, or for the aggregate nodes of the test structure bycomparing the first and last detected node. For example, a detector 1572detects electrical activity at the first node of a chain of structures1530. The detector 1572 detects electrical activity from second, andsubsequent node of a chain of structures. The signal propagationevolution (e.g. delay, slew rates, “shape”, etc.) from the first node tothe second and subsequent nodes can be ascertained directly, or bycomparison to the delay of the first, second and subsequent events tothe test/trigger signal 1528. In one embodiment, the node-to-nodedetectors are appropriate photoreceivers (e.g. photodiodes), whichdetect optoelectronic effects from the light/photons induced byswitching activities in the individual transistors' gates and junctionsin the test structures 1530 (e.g. hot-electron induced photon emissiondetected by probe-less time-resolves photon-counting, charge-inducedelectro-rectification and electro-absorption probed and detected bygated laser, etc.).

As photo-receivers, each may detect and register optoelectronic signalsfrom various elements of the test structure 1530. Each detector 1572 maybe coupled by an appropriate optical train with objective lens (and/orlenses) to the appropriate junction or junction in the test structures.On the other hand, the sensitivity of the individual photo-receiverswith wavelength λ₁ (energy source) and λ₂ (test/trigger energy source),which are characteristic of the beams from first and second energysources 1510, 1520, may be reduced or shielded entirely to avoidinterference. In an embodiment, one or more of the detectors 1572 maycorrespond to a time-resolved radiation detector, capable of providinghigh-resolution timing information on the registered hot-electroninduced photon emissions. These kinds of photo-receivers may bestructured from an avalanche photodiode and the associated circuitrythat have been designed to operate in time-resolved for single photoncounting mode. Alternatively, a multi-channel plate photomultiplier,coupled with a suitable detector, may be used as the photon counter.

Other types of detectors can be used for detecting different types ofelectrical activity from individual nodes.

Additional or Alternative Power and Detection Configuration Embodiments

Addtional embodiments may employ test structures that can be activatedand used with alternate intra die power sources. For example, anappropriately conditioned and controlled continuous wave CW laser sourcemay be used in conjunction with a thermoelectric Seebeckpower-generating device 1522 as shown in FIG. 14. As an alternative tousing a laser as energy source 1520, an electron-beam source may be usedto create the power signal 1518. For example, an electron-beam can beused as the second beam 1526 and it is directed onto second receiver1522, which may include, for example, of a metal line connected to adevice that converts the charge (or voltage) deposited or induced by theelectron-beam into a current. In another embodiment, an ion-beam may beused as the second beam 1526, and it can be directed onto the secondreceiver 1522 that consists, for example, of a dielectric over asemiconductor material connected to a device that converts the charge(or voltage) deposited by the ion-beam into a current.

Additional embodiments may employ test structures that can be activatedby an alternate source of test/trigger signal. For example, anelectron-beam may act as the first energy beam 1516 that is directedonto the first receiver 1512 that consists, for example, of a metal lineconnected to a device that converts charge, or voltage, into a currentpulse. In another embodiment, first energy beam 1516 may correspond toan ion beam can be directed onto the first receiver 1512 that consists,for example, of a dielectric over a semiconductor connected to a devicethat converts a voltage into a current pulse. As an alternative to useof the electromagnetic detection scheme of pad 1540 and detector 1574,and as an alternative to the detection scheme using an electron-beamprobe and secondary-electron detector 1573, a laser beam source may beused to detect electrical-activity in test structure 1530. For example,the third beam 1557 can be a laser beam directed onto a detector pad1540 that consists, for example, of a photoreceiver that changesreflectivity or voltage in response to electrical activity in teststructure 1530. Reflectivity modulation and/or voltage modulation frompad 1540 can be detected by detector 1573 and will be sensitive toelectrical activity in test structure 1530. Alternatively, as anion-beam, the third beam 1557 can be directed onto detector pad 1540 andthe modulation in a capacitively coupled signal to electrical activityin test structure 1530 can be measured with detector 1573.

As an alternative to the use of optoelectronic signals to measurenode-to-node switching activity, a fourth beam 1556, such as atime-gated/modulated laser beam (e.g. mode-locked and/or gated), can beused to detect a charge(current)-induced refractive or absorptiveeffect/signal at a specific node's diffusion/junction. This signal willmodulate during the electrical switching induced by the test/triggersignal, and can be detected by a probe and appropriately coupledphotoreceiver 1572.

Wafer Fabrication and Evaluation System

According to one embodiment of the invention, FIG. 16 providesadditional details for an apparatus that induces and measures electricalactivity from within designated locations of active regions in the diethat include co-located power, test/trigger, process sensitive teststructures and their associated buffering, regulation and shapingcircuits. A stimulus and probe device 1640 may be operated inconjunction with the wafer handling elements to direct stimulus andposition detectors and the associated electro-optic coupling mechanismbetween the apparatus and the wafers devices under test (DUT). Prior totaking of the measurements on a specific test structure, a wafer 1615 isplaced on a movable stage 1612, which is controlled by the waferhandling and alignment unit 1611. Test structures, such as described inprevious embodiments, may be imaged and found on the wafer 1615 throughillumination (e.g. by using flood-illumination or a laser scanningmicroscope (LSM)), and imaged through the use of an imaging camera, suchas a CCD (“Charged Coupling Device”) array or vidicon camera 1610, orother similar imaging apparatus, for example, a photo-receiver for LSM.According to an embodiment, the test structures may be placed within theactive area of one or more die in wafer 1615, and are co-located withpower and test/trigger circuitry in the active area. The stage 1612 ismoveable to achieve a predetermined alignment between the teststructures disposed on the wafer 1615 and the energy sources 1604, 1606and/or the probe 1642 beam's and detectors 1602 and 1613. Microscopeunit 1609 (e.g. electron, ion or optical based), with proper imaging andability to isolate images and areas of interest in its field-of-view, isused to image, isolate and couple the signal onto the detector 1602, andto shape and focus the aforementioned energy beams, or probes, onto thedevices to be measured. Alternatively, appropriate coupling leads (e.g.optical) can be attached to a probe head, which can be attached to themicroscope and apertures to achieve the same. Probe and detector 1642may require the use of imaging optics (e.g. electron, ion or optical, orcombinations thereof) to place and receive the probe beam and detectedsignal, respectively.

The process sensitive test structures may be measured after completionof a designated process step in the fabrication. Different classes oftest structures may be used just after completion of a particularprocess step(s) or sequences(s) in the fabrication. In general, the teststructures are usable to evaluate a process in the fabrication justafter the first level of connectivity (e.g. first-metal layer) iscompleted. Once the test structures are ready to be used, both a powerand/or test/trigger signal is applied to the power and test/triggerreceivers of the co-located test structure via stimulus and probeapparatus 1640. In an embodiment, the power and test signal may beapplied to the test structures by a properly shaped (power modulated andnoise suppressed) laser 1604 and modulating (in amplitude and/ortime-gated) laser 1606, respectively. The power laser 1604 may provide aconstant (DC) energy beam. The modulating beam 1606 may cause amodulated test/trigger signal to be generated on the wafer. Conductiveelements may be disposed within the chip/die active area to carry thepower and modulated test signal to the different test structures on thechip. In this way, no mechanical contact or interconnected regionsoutside of the active area are required to deliver stimuli to the teststructures. Optoelectronic signals generated at or near the teststructures may be detected and measured by detector 1602 from the teststructures on the wafer 1615. In one embodiment, the detector 1602detects and measures the signals and in a time-resolved manner. The testsignal may also result in an output signal from each test structure. Theoutput signal may be carried to a RF pad or antenna at which point thesignals may be detected by the radio-frequency detector 1613. Thedetector 1602 and the radio-frequency detector 1613 may communicate witha data processing unit 1622, which converts the respective inputs/datainto formats to be used and analyzed.

The overall operation of an apparatus such as described by FIG. 16 maybe controlled by automation, system control, and/or manual operation. Inone embodiment, a computerized control system 1605, or other dataprocessing unit, is used comprising a graphical user interface (GUI)1601, system control 1603, wafer and test structure circuitlayout/design and location database map 1630 (such as thoseCAD-navigation products provided by Knights Technology), stimuluscontrol 1632, and a data acquisition and analysis component 1622.Elements of the control system 1605 may be implemented as instructionscarried on any computer-readable medium. Machines shown in FIG. 16provide examples of processing resources and computer-readable mediumson which instructions for implementing embodiments of the invention canbe carried and/or executed. In particular, the numerous machines shownwith embodiments of the invention include processor(s) and various formsof memory for holing and manipulating data and instructions.

The system control 1603 may implement an automatic or programmaticcontrol of mechanical aspects of the overall apparatus shown in FIG. 16.The programmatic control may be implemented through use of software orother computer-executable instructions. In the case of manual control,the GUI 1601 or other interface mechanism may be employed. The GUI 1601enables an operator to select a fabrication and/or evaluation recipe fora DUT (Device Under Test). The GUI 1601 may also pass user-specifiedparameters and instructions to the system control 1603. The systemcontrol 1603 ensures seamless operability of the system. This includesarbitrating amongst the different modules in the system, and timing thevarious processes performed by the different modules so that the systemoperates asynchronously in an efficient manner. Thus, system control1603 ensures that when one module in the system finishes its task beforeanother module, it will wait for the other module.

The control system 1605 may use the wafer and test structure locationdatabase 1630, as well as stimulus control 1632 in operation to locateand stimulate individual test structures of the DUT. Evaluationinformation, which may include parameter values obtained fromstimulating test structures, may be stored by the data acquisition andanalysis component 1622. One or more algorithms or other processes maybe performed by or through the data acquisition and analysis module 1622to convert data of the performance parameter values into other forms ofevaluation information, including statistical or quantitative analysisof the DUT.

Performing Test Measurements

FIG. 17 illustrates a die that is configured for use with RF outputsignals, according to an embodiment of the invention. A die 1700 may beconfigured to co-locate a power receiver 1720, and a plurality of teststructure classes 1732, 1734, 1736 and 1738 in the active area. Thepower receiver 1720 produces the intra-die power signal, which in oneembodiment, is constant. In an implementation, the die 1700 may alsoinclude a co-located test/trigger receiver 1710 in the active area forreceiving and using test signals on distributed test structures. Thetest structures may be activated, through stimulus in the application ofa power signal, and possibly a trigger in the application of atest/trigger signal. When activated, each test structure (e.g. A₁-A₄) ina particular class 1732-1738 may exhibit electrical activity, such as inthe form of optical, optoelectronic, and/or radio frequency signals. Aprobe head may be brought into non-contact coupling to engage with thedie 1700 for purpose of energizing the test/trigger receiver 1710 andpower receiver 1720. Delivery of either (i) one energy beam to both thetest/trigger receiver 1710 and power receiver 1720 or (ii) separateenergy beams to each of the test/trigger receiver 1710 and powerreceiver 1720, may be accomplished through use of the probe head devicethat carries one or two (or more) sources of energy.

Multiple types of output signals and detection pads 1730 may beco-located in the active area, and used with corresponding teststructure. One embodiment generates RF signals that correspond to teststructure outputs. The RF signals may carry output information thatincludes switching speeds, slew rates, phase delays and otherperformance parameter values of a corresponding test structure, seriesof test structures, or set of test structures. For such an embodiment,one or more RF detection pads 1730 are used, so that the output may bein the form of an RF signal. The probe head may be equipped to detectthe RF signal from each detection pad 1730 provided on the die 1700. Inone embodiment, each RF signal may incorporate a signature or otheridentification mechanism to identify that RF signal over all other RFsignals emitted from the chip or wafer. In this way, specificperformance parameters may be correlated to known test structures. Inone implementation, all test structures 1732-1738 may feed outputsignals to the RF pad, and transmissions from RF pad may identify eachoutput signal based on a signature assigned to a specific test structureand/or a class of test structures, thereby achieving simultaneous pickupof multiple device responses. Alternatively, each of the test structure1732-1738 may have its own RF pad to transmit its output signal.

It should be recognized that there may be multiple test/triggerreceptors and power receptors, but that one test/trigger and powerreceptor can service multiple test structures and classes of teststructures. The use of isolated test/trigger and power receptors thatfeed into multiple test structures allows for the test/trigger and powerreceptors to be energized simultaneously. In one embodiment, multipletest/trigger and power receptors are used in order to use the teststructures at different processing steps. In one embodiment, multipletest/trigger and power receptors are used in order to use the teststructures at different locations on the die 1700.

According to one embodiment, RF signals carry an aggregate signal for anoverall test structure, or series of test structures. Other techniquesfor measuring such aggregate signals exist such as node-to-node detectorsystems that measure the first and last node in the aggregate teststructure. In addition, node-to-node (intra-test structure) measurementsmay be made using, for example, optoelectronic signals.

FIG. 18 describes a method for operating an apparatus such as describedin FIGS. 15-16, according to one embodiment of the invention.

Step 1810 provides that a test probe is brought into operationalproximity of a wafer that is to be tested. This may include locatingdesignated locations of die were testing is to be performed. A testprobe may be brought into operational proximity with a wafer. This mayinclude sub-steps of macro-alignment and micro-alignment. Themacro-alignment may correspond to the probe head reading an opticalmarker on a surface of the wafer to receive the information for locatingwhere the tests are to be performed. A similar micro-alignment may beperformed within the boundaries of the chip. Using the alignments, theprobe head is brought into operational proximity to the receptors forthe power and test/trigger receivers on the chip. The wafer may be in apartially or completely fabricated step.

Step 1820 provides that the test/trigger and power receivers areenergized in a contact-less, non-invasive and non-destructive manner.This may correspond to energizing the receivers with laser beams, suchas described with FIGS. 15 and 16.

An embodiment provides that in step 1830, the probe head detectselectrical activity from the various locations in the chip where teststructures and/or detector pads are located. For example, with referenceto FIG. 15, photon detectors 1572 detect photons from nodes within atest structure. The RF detector 1574 detects RF transmissions fromdetector pads 1540. Alternatively, probe and detector 1573 detectselectrical activity using, for example, electron-beam voltage contrast.The probe head may make the measurements simultaneously, or move overvarious locations on the chip in order to make the measurements.

Finally, in step 1840, the electrical activity that was detected fromthe test structures is used to evaluate the fabrication of the wafer.

CONCLUSION

Although illustrative embodiments of the invention have been describedin detail herein with reference to the accompanying drawings, it is tobe understood that the invention is not limited to those preciseembodiments. As such, many modifications and variations will be apparentto practitioners skilled in this art. Accordingly, it is intended thatthe scope of the invention be defined by the following claims and theirequivalents. Furthermore, it is contemplated that a particular featuredescribed either individually or as part of an embodiment can becombined with other individually described features, or parts of otherembodiments, even if the other features and embodiments make nomentioned of the particular feature. This, the absence of describingcombinations should not preclude the inventor from claiming rights tosuch combinations.

1. An arrangement for evaluating a fabrication of at least apartially-fabricated wafer, wherein the arrangement comprises: a circuitelement provided within an active region of a die of the wafer; a powerreceiver provided in the active region of the die and connected to thecircuit element, wherein the power receiver is configured to generate apower signal for the circuit element in response to receiving a powerinput; a test/trigger receiver provided in the active region of the dieand connected to the circuit element, wherein the test/trigger receiveris configured to generate a trigger signal for the circuit element inresponse to receiving a signal input; wherein in response to receivingthe power signal and the trigger signal, the circuit element isconfigured to exhibit an electrical activity that is detectable by atest probe without affecting a usability of a chip that is formed fromthe die, and wherein the electrical activity is indicative of one ormore characteristics that are a result of the fabrication.
 2. Thearrangement of claim 1, wherein the test/trigger receiver is configuredto generate the trigger signal for the circuit element in response toreceiving an energy beam.
 3. The arrangement of claim 1, wherein thetest/trigger receiver is configured to generate the trigger signal forthe circuit element in response to receiving a modulating energy beam.4. The arrangement of claim 1, wherein the power receiver is configuredto generate a power signal for the circuit element in response toreceiving an energy beam.
 5. The arrangement of claim 1, wherein thepower receiver is configured to receive the power input withoutcontacting a source of the power input.
 6. The arrangement of claim 5,wherein the power receiver is configured to receive the power input as aradio-frequency transmission transmitted from the source.
 7. Thearrangement of claim 5, wherein the power receiver is configured toreceive the power input as an inductive coupling with the source.
 8. Thearrangement of claim 5, wherein the power receiver is configured toreceive energy from an electron beam source.
 9. The arrangement of claim5, wherein the power receiver is configured to receive energy from anion beam source.
 10. The arrangement of claim 1, wherein the powerreceiver includes a voltage step-up to increase a voltage of the powersignal before it is supplied to the circuit element.
 11. The arrangementof claim 1, wherein the power receiver includes a photodiode.
 12. Thearrangement of claim 1, wherein: the power receiver is configured togenerate a power signal for the circuit element in response to receivinga constant laser beam; the test/trigger receiver is configured togenerate the trigger signal for the circuit element in response toreceiving a modulating laser beam.
 13. The arrangement of claim 1,wherein the circuit element is configured to exhibit the electricalactivity corresponding to a detectable production of photons.
 14. Thearrangement of claim 1, wherein the circuit element is configured toexhibit the electrical activity corresponding to an output signal fromthe circuit element.
 15. A semiconductor wafer comprising: a die havingan active region on which one or more devices are provided; a teststructure positioned in the active region; a power receiver provided inthe active region and connected to the test structure, wherein the powerreceiver is configured to generate a power signal for the test structurein response to receiving a power input; a test/trigger receiverpositioned in the active region and coupled to the test structure,wherein the test/trigger receiver is configured to generate a triggersignal for the test structure in response to receiving a signal input;wherein in response to receiving the power signal and the triggersignal, the test structure is configured to exhibit an electricalactivity that is detectable by a test probe without affecting ausability of integrated circuit elements provided on the die, andwherein the electrical activity is indicative of one or morecharacteristics that are a result of a fabrication of the wafer.
 16. Thesemiconductor component of claim 15, wherein the test/trigger receiveris configured to generate the trigger signal for the test structure inresponse to receiving an energy beam.
 17. The semiconductor component ofclaim 15, wherein the test/trigger generator is configured to generatethe trigger signal for the test structure in response to receiving amodulating energy beam.
 18. The semiconductor component of claim 15,wherein the power receiver is configured to generate a power signal forthe test structure in response to receiving an energy beam.
 19. Thesemiconductor component of claim 15, wherein the power receiver isconfigured to receive the power input without contacting a source of thepower input.
 20. The semiconductor component of claim 15, wherein thepower receiver includes a voltage step-up to increase a voltage of thepower signal before it is supplied to the test structure.
 21. Thesemiconductor component of claim 15, wherein the power receiver includesa photodiode.
 22. The semiconductor component of claim 15, wherein: thepower receiver is configured to generate a power signal for the circuitelement in response to receiving a constant laser beam; the test/triggerreceiver is configured to generate the trigger signal for the teststructure in response to receiving a modulating laser beam.
 23. Thesemiconductor component of claim 15, wherein the electrical activitycorresponds to a detectable production of photons.
 24. The semiconductorcomponent of claim 15, wherein the electrical activity corresponds to anoutput signal from the test structure.
 25. The semiconductor componentof claim 24, further comprising a detection pad, where the detection padis configured to receive the output signal and transmit aradio-frequency communication that corresponds to the output signal. 26.A method for evaluating a fabrication of a semiconductor wafer, themethod comprising the steps of: causing power to be generated fromwithin the die and to be supplied to the test structure; causing atrigger signal to be generated from within a die of the wafer and to besupplied to a test structure; detecting electrical activity exhibited bythe test structure upon the trigger signal and power being supplied tothe test structure; correlating the detected electrical activity to astep or sequence of the fabrication of the wafer.
 27. The method ofclaim 26, further comprising the step of using the electrical activityto determine a result or attribute of the step or sequence of thefabrication.
 28. The method of claim 26, wherein the step of causingpower to be generated from within the die and to be supplied to the teststructure includes using a contact-less mechanism to supply an energybeam to a portion of the wafer on which a power receiver is located. 29.The method of claim 28, wherein the contact-less mechanism includes alaser that emits a laser beam, and wherein the power receiver includes aphotodiode.
 30. The method of claim 28, wherein the step of detectingelectrical activity exhibited by the test structure includes detectingone or more optoelectronic signals from the test structure.
 31. Themethod of claim 28, wherein the step of detecting electrical activityexhibited by the test structure included detecting an output electricalsignal from the test.
 32. The method of claim 28, wherein the step ofdetecting electrical activity exhibited by the test structure includeddetecting using an electron beam.
 33. The method of claim 28, whereinthe step of using the contact less mechanism includes using anon-destructive mechanism, so that a chip formed from the die is usableafter the electrical activity is detected.
 34. A method for measuringelectrical characteristics of a die on at least a partially fabricatedsemiconductor wafer, said method comprising: generating a power signalfrom within the die by energizing a first set of one or morepredetermined areas inside the die using either the first externalenergy source; generating a trigger signal from within the die byenergizing a second set of one or more predetermined areas inside thedie using a first external energy source or a second external energysource, wherein the predetermined areas are stimulated withoutmechanical contact between the external energy source and the die;detecting an electrical activity within the die as a result of thetrigger signal being generated; and determining a characteristics of atleast a component in the die based on the detected electrical activity.35. The method of claim 34, further comprising the step of applying thetrigger signal and the power signal to a test structure provided withinthe die.
 36. The method of claim 35, further comprising the step ofregulating the power signal after it is generated but before it isapplied to the test structure.
 37. The method of claim 36, wherein thestep of regulating the power signal includes controlling at least one ofthe first external source and the second external source to maintain thepower signal between an upper threshold limit and lower threshold limitof the test structure.
 38. The method of claim 34, wherein the teststructure includes a circuit element.
 39. The method of claim 34,wherein the step of detecting an electrical activity within the dieincludes detecting one or more optoelectronic effects.
 40. The method ofclaim 34, wherein the step of detecting an electrical activity withinthe die includes detecting using an electron beam.
 41. The method ofclaim 34, wherein the step of detecting an electrical activity withinthe die includes detecting an output electrical signal from the teststructure.
 42. The method of claim 34, wherein the step of determining acharacteristics of at least a component in the die includes determininga characteristic of the test structure.
 43. The method of claim 34,wherein the step of generating a trigger signal from within the dieincludes generating the trigger signal from within an active region ofthe die.
 44. The method of claim 42, wherein the step of generating apower signal from within the die includes generating the power signalfrom within the active region of the die 21, further comprising the stepof using a design for the first set of test structures, that whenactivated, provide electrical activity that accentuates a particularresult of the one or more fabrication steps.